[A-2-3] Oxygen Precipitation Control by Hydrogen and Preannealing at 425℃ in Czochralski Silicon Crystals

Akito Hara, Masaki Aoki, Tetsuo Fukuda, Akira Ohsawa (1.Fujitsu Laboratories Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-2-4] Dislocation Engineering for Silicon Devices

J. S. Custer, J. R. Liefting, R. J. Schreutelkamp, R. C. M. Wijburg, H. Wallinga, F. W. Saris (1.FOM Institute for Atomic and Molecular Physics, 2.University of Twente, MESA Research Institute, 3.IMEC vzw)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-2-5] Molecular Scale Resist Simulation and Measurement for Pattern Fluctuation Analysis

Edward W. SCHECKLER, Shoji SHUKURI, Eiji TAKEDA (1.Hitachi Central Research Laboratory, Hitachi, Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-2-6] Processing Uniformity Improvement by Magnetic Field Distribution Control in Electron Cyclotron Resonance Plasma Chamber

Hiroshi Nishimura, Mikiho Kiuchi, Seitaro Matsuo (1.NTT LSI Laboratories)

1992 International Conference on Solid State Devices and Materials |PDF Download

[B-1-1] Low-Temperature CVD of Amorphous-Silicon and Silicon-Nitride --A New Trend of TFT Technology--

Masakiyo Matsumura, Osamu Sugiura (1.Tokyo Institute of Technology)

1992 International Conference on Solid State Devices and Materials |PDF Download

[B-1-2] High-Performance Poly-Si Thin-Film Transistors with Excimer-Laser Annealed Silicon-Nitride Gate

Kazuhiro Shimizu, Masayuki Higashimoto, Kyoutarou Nakamura, Osamu Sugiura, Masakiyo Matsumura (1.Department of Physical Electronics, Tokyo Institute of Technology, 2.Fujitsu Corp.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[B-1-3] A Simple Polysilicon Thin Film Transistor Structure for Achieving High On/Off Current Ratio Independent of Gate Bias

J. Kanicki, M. K. Hatalis (1.IBM Research Division, Thomas J. Watson Research Center, 2.Department of Electrical Engineering and Computer Science Lehigh University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[B-1-4] A Fabrication of Homogenious Poly-Si TFT's Using Excimer Laser Annealing

I. Asai, N. Kato, M. Fuse, T. Hamano (1.Electronic Imaging and Devices Research Laboratory, Fuji Xerox Co., Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[B-2-1] Two-Dimensional Contact-Type Image Sensor Using Amorphous Silicon Photo-Transistor

Muneaki Yamaguchi, Yoshiyuki Kaneko, Ken Tsutsui (1.Central Research Laboratory, Hitachi, Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[B-2-2] New Drain Conductance Method to Evaluate Impact Ionization Phenomenon in SOI MOSFET

Hiroyuki KURINO, Takeshi HASHIMOTO, Kiyomi HATA, Hiroyuki KIBA, Yasuo YAMAGUCHI, Tadashi NISHIMURA, Mitumasa KOYANAGI (1.Research Center for Integrated Systems, Hiroshima University, 2.LSI Laboratory, Mitsubishi Electric Corporation)

1992 International Conference on Solid State Devices and Materials |PDF Download

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