[PC2-4] Surface Passivation of In0.52Al0.48As Using (NH4)2Sx and P2S5/(NH4)2S

Nobuhide YOSHIDA, Junsuke INO, Masahiro TOTSUKA, Satoru MATSUMOTO (1.Department of Electrical Engineering, Faculty of Science and Technology, Keio University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PC2-5] Etch Mask Passivation and Etching of III/V Compounds by CO+ Ion Beams

B. Kempf (1.Deutsche Bundespost TELEKOM, Forschungsinstitut beim FTZ)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PC2-6] Effective Surface Passivation of GaAs by Using Electrochemical Sulfurized Treatment

X. Y. Hou, Z. S. Li, W. Z. Cai, X. M. Ding, Xun Wang (1.Surface Physics Laboratory, Fudan University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PC2-7] Atomic Layer Epitaxy of AlAs Using Trimethylamine-Alane and Tris-Dimethylamino-Arsenic

Kazuyuki FUJII, Ikuo SUEMUNE, Masamichi YAMANISHI (1.Faculty of Engineering, Hiroshima University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PC2-8] Non-Pseudomorphic Strained-Layer Multiple Quantum Wells for Device Applications

Shigeru NIKI, Yunosuke MAKITA, Akimasa YAMADA, Akira OBARA (1.Optoelectronics Division, Electrotechnical Laboratory, MITI)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PC2-9] Growth of Nanoscale InP Islands by VPE for Quantum Box Structures

J. Ahopelto, A. A. Yamaguchi, K. Nishi, A. Usui, H. Sakaki Y. Mochizuki (1.Quantum Wave Project, ERATO, Research Development Corporation of Japan (JRDC), 2.NEC Corporation)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PC2-10] Sb/GaSb Multilayer Structures for Potential Application as an Indirect Narrow Bandgap Material

T. D. Golding, J. A. Dura, W. C. Wang, J. T. Zborowski, D. C. Chen, Z. Zou, J. H. Miller, Jr., J. R. Meyer (1.Department of Physics and Space Vacuum Epitaxy Center, University of Houston, 2.Naval Research Laboratory)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PC2-11] Impurity Breakdown and Current Filamentation in MBE Grown GaAs with Parallel Monolayer Doping

Helmar KOSTIAL, Thomas IHN, Marion ASCHE, Rudolf HEY, Klaus PLOOG, Frederik KOCH (1.Paul-Drude-Institut fur Festkorperelektronik)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PC2-12] Minority-Carrier Lifetime in Heavily Doped GaAs:C

A. P. Heberle, U. Strauss, W. W. Ruhle, K. H. Bachem, T. Lauterbach N. Haegel (1.Max-Planck-Institut fur Festkorperforschung, 2.Fraunhofer-Institut fur Angewandte Festkorperphysik, 3.University of California, Department of Materials and Applied Science)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PC2-13] Effects of Growth Parameters on Oxygen Incorporation into InGaAlP Grown by Metalorganic Chemical Vapor Deposition

Yukie Nishikawa, Mariko Suzuki, Masaki Okajima (1.Research and Development Center, Toshiba Corporation)

1992 International Conference on Solid State Devices and Materials |PDF Download

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