[PA1-6] Critical Parameters for Obtaining Low Particle Densities in an HF-Last Process

J. L. Alay, S. Verhaverbeke, W. Vandervorst, M. Heyns (1.IMECvzw, 2.LCMM, Facultat de Fisica, Universitat de Barcelona)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PA1-7] Measurement of Physical Thickness of Native Oxide Using Accurately-Calibrated Atomic Force Microscope

Shintaro Aoyama, Yoshinori Nakagawa, Tadahiro Ohmi (1.Department of Electronics, Tohoku University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PA1-8] Characterization of HF-Treated Si Surfaces by Photoluminescence Spectroscopy and Scanning Tunneling Microscopy

Tomohiro KONISHI, Katsuhiro UESUGI, Seiji KAWANO, Takafumi YAO, Hisayoshi OHSHIMA, Hiroyasu ITO, Tadashi HATTORI (1.Department of Electrical Engineering, Hiroshima University, 2.Research Laboratories Nippondenso Co., Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PA1-9] Silane Thermal Decomposition Characteristics on Various Si Surface

Tsuyoshi Watanabe, Masakazu Nakamura, Atsushi Ohki, Koji Kawada Shinji Miyoshi, Shinji Takahashi, Michael S. K Chen, Tadahiro Ohmi (1.Department of Electronics, Tohoku University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PA1-L10] AFM/STM Investigation of pn Junctions Formed by Ion Implantation

Yasuhiro SUGAWARA, Yoshinobu FUKANO, Seizo MORITA Akihiko NAKANO, Tohru IDA (1.Department of Physics, Faculty of Science, Hiroshima University, 2.VLSI Development Laboratories, IC Group, Sharp Corporation)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PA2-1] Dynamic Shielding of Substrate Bias Effects on Electrical Characteristics of High Voltage IGBTs on SOI

Akio Nakagawa, Tomoko Matsudai, Ichiro Omura (1.Toshiba Corporation)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PA2-2] A High Speed, Low Power P-Channel Flash EEPROM Using Silicon Rich Oxide as Tunneling Dielectric

C. C. -H. Hsu, A. Acovic, L. Dori, B. Wu, T. Lii, D. Quinlan, D. DiMaria, Y. Taur, M. Wordeman, T. Ning (1.IBM Research Division, Thomas J. Watson Research Center, 2.Department of Electrical Engineering, National Tsing-Hua Univ.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PA2-3] A Simple Model for the Switching Behavior of a SONOS EEPROM Device

J. K. Lin, C. Y. Chang, T. S. Ho, H. S. Huang (1.Institute of Electronics, National Chiao Tung University, 2.Memory Products Division, United Microelectronics Corporation)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PA2-4] Nitrogen Dangling Bonds in Hydrogenated Amorphous Silicon Nitride Thin Films

J. Kanicki, W. L. Warren, E. H. Poindexter (1.IBM Research Division, Thomas J. Watson Research Center, 2.Sandia National Laboratories, 3.US Army ET&DL)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PA2-6] Interface State Generation and Annihilation in Thin Film p-Channel MOSFETs

Quazi Deen Mohd Khosru, Naoki Yasuda, Kenji Taniguchi, Chihiro Hamaguchi (1.Department of Electronic Engineering, Osaka University, 2.Toshiba Corporation, ULSI Research Center)

1992 International Conference on Solid State Devices and Materials |PDF Download