[D-1-2] Study of a Veil Structure and a Two-Step Corrosion Suppression Process in Al-Si-Cu Etching

Kazuhito Sakuma, Shoji Yagi, Kazuo Imai (1.NTT LSI Laboratories)

1992 International Conference on Solid State Devices and Materials |PDF Download

[D-1-3] Submicron SiO2 Hole Filling Characteristics Employing ECR Al Sputtering with High Magnetic Field

N. Morimoto, S. Takehiro, Y. Matsui, I. Utsunomiya, H. Shindo, S. Shingubara, Y. Horiike (1.Dept. of Electrical Engineering, Hiroshima University, 2.Faculty of engineering, Fukuyama University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[D-1-4] The Improvement of CVD-WSix Process by Preheating Method

Takeyasu Saito, Yoshiaki Yuyama, Yasuyuki Egashira, Yukihiro Shimogaki, Katsuro Sugawara, Hiroshi Komiyama (1.Department of Chemical Engineering, The University of Tokyo)

1992 International Conference on Solid State Devices and Materials |PDF Download

[D-1-5] Low Resistance and Thermally Stable Ti-Silicided Shallow Junction Formed by Advanced 2-Step Rapid Thermal Processing and Its Application to Deep Submicron Contact

H. Kotaki, K. Mitsuhashi, J. Takagi, Y. Akagi, M. Koba (1.Central Research Laboratories, Research and Analysis Center, Sharp Corporation)

1992 International Conference on Solid State Devices and Materials |PDF Download

[D-1-6] The Suppression of Precipitation in Boro-Phospho-Silicate-Glass Films by Surface Control by Silylation (SCS) Process

Kousaku Yano, Yuka Terai, Sin-ichi Imai, Tetsuya Ueda, Satoshi Ueda, Masayuki Endoh, Noboru Nomura (1.Semiconductor Research Center Matsushita Electric Industrial Co., Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PA1-1] The Initial Stages of the Thermal Oxidation of Si(001) 2×1 Surface Studied by Scanning Tunneling Microscopy

Masaharu UDAGAWA, Masaaki NIWA, Isao SUMITA (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., 2.Matsushita Research Institute Tokyo, Inc.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PA1-2] Initial Stage of SiO2/Si Interface Formation on Si(111) Surface

Yoshinari TAMURA, Kazuaki OHISHI, Hiroshi NOHIRA, Takeo HATTORI (1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PA1-3] In-situ Characterization of Si Surface Oxidation by High-Sensitivity Infrared Reflection Spectroscopic Method in Vacuum Chamber

M. NISHIDA, Y. MATSUI, M. OKUYAMA, Y. HAMAKAWA (1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PA1-4] Nanometer Resolution Measurement of Dielectric Breakdown of Silicon Dioxide Films with AFM/STM

Yoshinobu FUKANO, Yasuhiro SUGAWARA, Seizo MORITA, Yoshiki YAMANISHI, Takahiko OASA (1.Department of Physics, Faculty of Science, Hiroshima University, 2.Advanced Technology Research Labs., Sumitomo Metal Industries, Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PA1-5] Preoxide-Controlled Oxidation for Very Thin Gate Oxide

K. Makihara, A. Teramoto, K. Nakamura M. Morita, T. Ohmi (1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University)

1992 International Conference on Solid State Devices and Materials |PDF Download