[PC1-9] High Temperature (80℃) 100 mW Operation of InGaAIP Visible Laser Diodes

Masaki OKAJIMA, Koichi NITTA, Yukie NISHIKAWA, Kazuhiko ITAYA, Gen-ichi HATAKOSHI (1.Research and Development Center, Toshiba Corp.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PC1-10] Strained Single Quantum Well AlGaInP Laser Diodes with an Asymmetric Waveguiding Layer

S. Kawanaka, T. Tanaka, H. Yanagisawa, S. Yano, S. Minagawa (1.Central Research Laboratory, Hitachi Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PC1-11] High Efficiency InGaAs/InGaAsP Compressively Strained Multi-Quantum-Well Laser Diode

S. Ogita, H. Kobayashi, T. Higashi, O. Aoki, N. Okazaki, H. Soda (1.Fujitsu Laboratories Ltd, Atsugi)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PC1-12] Time-Resolved Study on the Impact-Excited 1.54μm Emission of Er3+ Ions in InP and Its Excitation and Quenching Mechanisms

Tadamasa KIMURA, Hideo ISSHIKI, Hiroyuki ISHIDA, Shigemi YUGO, Riichiro SAITO, Toshiaki IKOMA (1.University of Electro-Communications, 2.Frontier System, Riken Institute, 3.Institute of Industrial Science, University of Tokyo)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PC1-13] FELES: A New 2D Software Design Tool for Optoelectronic Devices

Gen Lin TAN, Keith LEE, J. M. XU (1.Department of Electrical Engineering, University of Toronto)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PC1-14] Hydrogenated Amorphous Silicon Carbide Photoreceptor for Photoaddressed Spatial Light Modulator

Koji AKIYAMA, Akio TAKIMOTO, Hisahito OGAWA (1.Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PC1-L15] Electric-Field Dependent Optical Absorption in an InAlAs/InP Type II Superlattice

H. Kobayashi, Y. Kawamura, H. Iwamura (1.NTT Opto-electronics Laboratories)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PC2-1] Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a Novel In-Situ Electrochemical Process

Tamotsu HASHIZUME, Hideki HASEGAWA, Takayuki SAWADA, Andreas GRUB, Hans L. HARTNAGEL (1.Hokkaido Polytechnic College, 2.Research Center for Interface Quantum Electronics, Hokkaido University, 3.Institut fur Hochfrequentztechnik, Technische Hochshule Darmstadt)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PC2-2] Broad Area Electron Beam Enhanced Passivation Treatment of Sulfur Surface of GaAs

Y. C. DU, H. WANG, D. C. SUN, F. M. LI (1.Department of Electronic Eng., Tri-beams open Lab and Department of Physics, Fudan University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PC2-3] Reduction of Surface State Density in InP by Laser Irradiation

Hideo Nakanishi, Kazumi Wada (1.NTT LSI Laboratories)

1992 International Conference on Solid State Devices and Materials |PDF Download

263 results (81 - 90)

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