[S-IV-6] Hot-Carrier Immunity of a 0.1-μm-Gate Ultrathin-Film MOSFET/SIMOX

Y. Omura, K. Izumi (1.NTT LSI Laboratories)

1992 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-7] Low Temperature MOSFET Operation by the Temperature Scaling Theory

Michio Yokoyama, Tetsuya Hidaka, You-Wen Yi, Kazuya Masu, Kazuo Tsubouchi (1.Research Institute of Electrical Communication, Tohoku University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-8] Sub-20 psec Switching CMOS at Liquid N2 Temperature

Junji KOGA, Minoru TAKAHASHI, Hiromi NIIYAMA, Akira TORIUMI (1.ULSI Research Center, TOSHIBA Corporation)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-3-1] Evaluation of Localised Trapped Charge and Interface States in MOSFET's Through Gate Capacitances Measurement

R. Ghodsi, Y. T. Yeow, C. H. Ling, M. K. Alam (1.Department of Electrical Engineering, the University of Queensland, 2.Department of Electrical Engineering, National University of Singapore, 3.School of Microelectronic Engineering, Griffith University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-3-2] A New Prediction Method for Hot Carrier Degradation of Submicron PMOSFET with Charge Pumping Technique

Takahisa HAYASHI, Hisashi FUKUDA, Akira UCHIYAMA, Toshiyuki IWABUCHI (1.Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-3-3] Understanding of Enhanced Sensitivity to Hot Carrier Degradation in Drain Engineered n-FETs

C. C. -H. Hsu, B. S. Wu, G. G. Shahidi, B. Davari, W. H. Chang, A. Acovic (1.IBM Research Division, Thomas J. Watson Research Center, 2.Department of Electrical Engineering, National Tsing-Hua Univ.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-3-4] Effect of Gate Materials on Generation of Interface State by Hot-Carrier Injection

H. Matsuhashi, S. Nishikawa (1.Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-3-5] AC Hot-Carrier-Degradation Mechanism in LDDMOSFET's

Nobuhiro SHIMOYAMA, Toshiaki TSUCHIYA (1.NTT LSI Laboratories)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-4-1] Characterization of Ultra-Thin Capacitors Fabricated Using RTN Treatment Prior to CVD Ta2O5 Film Formation

Satoshi Kamiyama, Pierre-Yves Lesaicherre, Akihiko Ishitani, Akira Sakai, Akio Tanikawa, Iwao Nishiyama (1.VLSI Development Division, NEC Corporation, 2.Micro-electronics Research Laboratory, NEC Corporation, 3.Opto-electronics Research Laboratory, NEC Corporation)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-4-2] Effect of Post-Deposition Annealing and Electrode Materials on the Characteristics of Tantalum Oxide Films Deposited by Plasma-Enhanced Chemical Vapor Deposition

H. S. Park, Y. K. Baek, J. C. Kim, S. H. Choi, K. H. Oh (1.Hyundai Electronics Industries Co., Ltd. Semiconductor Research and Development Lab.)

1992 International Conference on Solid State Devices and Materials |PDF Download