[A-6-3] Polycrystalline Carbon: A Novel Material for Gate Electrodes in MOS Technology

G. RAGHAVAN, J. L. HOYT, J. F. GIBBONS (1.Solid State Electronics Laboratories, McCullough 226, Stanford University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-6-4] Electronic Structures of Si-Based Man-Made Crystals

Satoshi Sugahara, Osamu Sugiura, Masakiyo Matsumura (1.Department of Physical Electronics, Tokyo Institute of Technology)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-6-5] Amorphous Visible-Light Thin Film LED Having a-SiN:H As a Luminescent Layer

Dusit Kruangam, Wirote Boonkosum, Pavan Siamchai, Somsak Panyakeow (1.Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[B-3-2] Effects of Impurity Scattering on Resonant Transmission Coefficients in GaAs/AlAs Double Barrier Structures

Hiroyuki FUKUYAMA, Takao WAHO, Takashi MIZUTANI (1.NTT LSI Laboratories)

1992 International Conference on Solid State Devices and Materials |PDF Download

[B-3-3] Temperature Dependence of the DC and High Frequency Properties of HEMTs with Sub 0.1 μm Gatelength

A. Marten, H. Schweizer H. Nickel, W. Schlapp, R. Losch (1.Physikalisches Institut, Universitat Stuttgart, 2.FTZ-Telekom)

1992 International Conference on Solid State Devices and Materials |PDF Download

[B-3-4] High-Performance InAlAs/InGaAs HEMTs and Their Application to a 40-GHz Monolithic Amplifier

Yohtaro Umeda, Takatomo Enoki, Kunihiro Arai, Yasunobu Ishii (1.NTT LSI Laboratories)

1992 International Conference on Solid State Devices and Materials |PDF Download

[B-3-5] AlGaAs/GaAs Heterojunction Bipolar Transistor ICs for Optical Transmission Systems

Nobuo Nagano, Tetsuyuki Suzaki, Masaaki Soda, Kensuke Kasahara, Kazuhiko Honjo (1.Microelectronics Research Laboratories and Opto-Electronics Research Laboratories, NEC Corporation)

1992 International Conference on Solid State Devices and Materials |PDF Download

[B-4-1] Unique Polarization Dependent Electroabsorption Effect in Coupled Quantum Wells

Yuen-Chuen CHAN, Kunio TADA (1.Department of Electronic Engineering The University of Tokyo)

1992 International Conference on Solid State Devices and Materials |PDF Download

[B-4-2] A Selective Growth of GaAs Micro Crystals on a Se-Terminated GaAlAs Surface from Ga Droplets for the Quantum Well Box Structure

Toyohiro Chikyow, Nobuyuki Koguchi (1.National Research Institute for Metals, Tsukuba Laboratories)

1992 International Conference on Solid State Devices and Materials |PDF Download

[B-4-3] Photoluminescence Study of Electron Beam-Induced Damage in GaAs/AlGaAs Quantum Well Structures

N. Tanaka, H. Kawanishi, T. Ishikawa (1.Optoelectronics Technology Research Laboratory (OTL))

1992 International Conference on Solid State Devices and Materials |PDF Download

263 results (191 - 200)

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