[PD2-9] Doping Control in LPCVD in-situ Boron Doped Polysilicon

Jun-ichi Shiozawa, Yosio Kasai, Yuu-ichi Mikata, Kikuo Yamabe (1.ULSI Research Center, Integrated Circuit Advanced Process Engineering Depart. Toshiba Corporation)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PD2-10] The Impact of Titanium Silicide on the Contact Resistance for Shallow Junction Formed by Out-Diffusion of Arsenic from Polysilicon

Wen Luh Yang, Tan Fu Lei, Jeng Tong Hwang, Chung Len Lee (1.Institute of Electronics, National Chiao Tung University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PD2-L11] Angle Resolved X-Ray Photoelectron Spectroscopy Study of Ultrathin N2O Oxides

J. Ahn, M. Arendt, J. M. White, D. L. Kwong (1.Microelectronics Research Center, The University of Texas at Austin)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PD2-L12] Side Etch Control of n+-Polysilicon with Nitrogen Added Chlorine Plasma

Takashi MATSUURA, Junichi MUROTA, Tadahiro OHMI, Shoichi ONO (1.Department of Electronic Engineering, Faculty of Engineering, 2.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PD2-L13] Raman Study of Stresses Caused by Intrinsic Getters Distribution in Device Structures

V. V. Bolotov, M. D. Efremov, I. Babanskaya, K. Schmalz (1.Institute of Semiconductor Physics)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PD3-1] Hemispherical Grained Silicon (HSG-Si) Formation on In-Situ Phosphorous Doped Amorphous-Si Using The Seeding Method

H. Watanabe, T. Tatsumi, A. Sakai, S. Shishiguchi, T. Niino, I. Honma, T. Mizutani, T. Kikkawa (1.Microelectronics Research Labs., NEC Corp., 2.VLSI Development Division, NEC Corp.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PD3-2] Novel Single-Step Oxynitridation (SS-RTON) Technology for Forming Highly Reliable EEPROM Tunnel Oxide Films

Hisashi FUKUDA, Makoto YASUDA, Toshiyuki IWABUCHI (1.Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PD3-3] A New Cracking Phenomena of Thin Si3N4 Film due to Stress from Poly-Si Grain Growth

Masahiro ITOH, Nobuhiko INOUE, Norio HIRASHITA, Masaki YOSHIMARU (1.Oki Electric Industry Co., Ltd., VLSI Research and Development Center)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PD3-4] Low-Temperature Furnace-Annealed Aluminum-Gate MOSFET for Ultra-High-Speed Integrated Circuits

K. Kotani, T. Ohmi, S. Shimonishi, T. Migita, H. Komori, T. Shibata, T. Nitta (1.Department of Electronic Engineering, Tohoku University, 2.Device Development Center, Hitachi Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF Download

[PD3-5] Degradation of SiO2/Si Interface Characteristics by Aluminum Contamination

T. Itoga, H. Kojima, A. Hiraiwa (1.Central Research Laboratory, Hitachi Ltd.)

1992 International Conference on Solid State Devices and Materials |PDF Download