TiN Structure by High Density ECR Plasma

Seiichi YOKOYAMA, Yasuyuki ITO Kazuya ISHIHARA, Kazuyuki HAMADA, Shigeo OHNISHI, Jun KUDO, Keizo SAKIYAMA (1.VLSI Development Laboratories, Functional Devices Laboratories, SHARP Corporation)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-7-3] Real Time Monitoring of Surface Reactions during Plasma Enhanced CVD of Silicon

S. Miyazaki, H. Shin, Y. Miyoshi, M. Hirose (1.Department of Electrical Engineering Hiroshima University)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-7-4] Stability and Mobility of Surface Precursors for Reaction Gases in W-CVD

Ryotaro IRIE, Nobuyoshi KOBAYASHI, Jiro USHIO, Yoshiaki TAKEMURA, Takuya MARUIZUMI (1.Hitachi, Ltd. Central Research Laboratory)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-8-1] Characterization of the Porous Boron δ-Doped Si Superlattice

T. C. Chang, M. Y. Hsu, C. Y. Chang, C. P. Lee, T. G. Jung, W. C. Tsai, G. W. Hunag, Y. J. Mei (1.Institute of Electronics, National Chiao Tung University)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-8-2] Ultra-Shallow and Abrupt Boron Profiles in Si by the δ-Doping Technique

H. Kujirai, E. Murakami, S. Kimura (1.Central Research Laboratory, Hitachi, Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-8-3] Enhanced Conductivity and Retarded Boron Diffusion in the As Preamorphized p+Poly-Si Gate

Sang Jik Kwon, Yeo Hwan Kim, Jong Duk Lee (1.Dept. of Electronics Engineering, Kyungwon Univ., 2.ETRI, 3.Inter-Univ. Semicon. Res. Center, Seoul Nat. Univ.)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-8-4] Direct Observation of Vacancy Supersaturation in Retarded Diffusion of Boron in Silicon Probed by Monoenergetic Positron Beam

K. Osada, Y. Zaitsu, S. Matsumoto, S. Tanigawa, A. Uedono, M. Yoshida, E. Arai, T. Abe (1.Faculty of Science and Technology, Keio University, 2.Institute of Materials Science, University of Tsukuba, 3.Kyusyu Insti. of De., 4.NTT LSI Labs., 5.SEH R&D Center Shin-Etsu Handotai Co., Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-8-5] Reducing the Reverse-Bias Current in 450℃-Annealed n+p Junction by Hydrogen Radical Sintering

M. M. Oka, A. Nakada, K. Tomita, T. Shibata, T. Ohmi, T. Nitta (1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University, 2.Device Development Center, Hitachi Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-9-1] Photoluminescence of SiGe Quantum Wells Grown on SIMOX by Gas Source MBE

Deepak K. NAYAK, Noritaka USAMI, Susumu FUKATSU, Yasuhiro SHIRAKI (1.Research Center for Advanced Science and Technology (RCAST) The University of Tokyo)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-9-2] Photoluminescence from Silicon Quantum Well Formed on SIMOX Substrate

Yasuo Takahashi, Tomofumi Furuta, Toshihiko Ishiyama, Michiharu Tabe (1.NTT LSI Laboratories)

1994 International Conference on Solid State Devices and Materials |PDF Download