[S-II-6] SOI Technology for Low-Power Applications

Bor-Yuan Hwang, Marco Racanelli, Margaret Huang, Juergen Foerstner, Syd Wilson, Tom Wetteroth, Steve Wald, Jim Rugg, Sunny Cheng (1.Motorola Semiconductor Products Sector)

1994 International Conference on Solid State Devices and Materials |PDF Download

[S-II-7] Comparison of Fully Depleted and Partially Depleted Mode Transistors for Practical, High-Speed, Low-Power 0.35 μm CMOS/SIMOX Circuits

Akira Yoshino, Kouichi Kumagai, Nobuhisa Hamatake, Susumu Kurosawa, Koichiro Okumura (1.ULSI Device Development Laboratories, NEC Corporation)

1994 International Conference on Solid State Devices and Materials |PDF Download

[S-II-8] Scaling Theory for Vth Controlled n+-p+ Double-Gate SOI MOSFETs

Kunihiro Suzuki, Yoshiharu Tosaka, Tetsu Tanaka, Akira Satoh, Toshihiro Sugii (1.Fujitsu Laboratories Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF Download

[S-II-9] Some Properties of SOI Gate-All-Around Devices

P. Francis, X. Baie, J. P. Colinge (1.Universite Catholique de Louvain, Maxwell-DICE)

1994 International Conference on Solid State Devices and Materials |PDF Download

[S-II-10] Double SOI Structures and Device Applications with Heteroepitaxial Al2O3 and Si

M. ISHIDA, Y. T. LEE, T. HIGASHINO, H. D. SEO, T. NAKAMURA (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)

1994 International Conference on Solid State Devices and Materials |PDF Download

[S-II-11] Void-Free Bonded SOI Substrates for High Voltage, High Current Vertical DMOS Type Power ICs

Tomohiro Hamajima, Kenya Kobayashi, Hiroaki Kikuchi, Kensuke Okonogi, Kenichi Arai, Yasuhito Ninomiya, Mitsuasa Takahashi (1.ULSI Device Development Laboratories Semiconductor Division NEC Corporation)

1994 International Conference on Solid State Devices and Materials |PDF Download

[S-II-12] Switching Characteristics of a Thin Film SOI Power MOSFET

Satoshi Matsumoto, Il-Jung Kim, Tatsuo Sakai, Takao Fukumitsu, Toshiaki Yachi (1.NTT Interdisciplinary Research Laboratories)

1994 International Conference on Solid State Devices and Materials |PDF Download

[S-II-13] Improved Latch-Up Characteristics of the LIGBT with the p+ Cathode Well on the SOI Substrate

Byeong Hoon Lee, Chong Man Yun, Dae Seok Byeon, Min Koo Han, Yearn Ik Choi (1.Dept. of Electrical Engineering, Seoul National University, 2.Dept. of Electronics Engineering, Ajou university)

1994 International Conference on Solid State Devices and Materials |PDF Download

[S-II-14] Numerical Prediction for 2GHz RF Amplifier of SOI Power MOSFET

Ichiro Omura, Akio Nakagawa (1.Research and Development Center, Toshiba Corp.)

1994 International Conference on Solid State Devices and Materials |PDF Download

[PA-1-1] An Investigation on the Short Channel Effect for 0.1μm SOIMOSFET Using Equivalent One Dimensional Model

R. Koh, H. Kato (1.Microelectronics Res. Lab. NEC Corp.)

1994 International Conference on Solid State Devices and Materials |PDF Download

340 results (91 - 100)

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