[PA-4-7] Ultra Short and Narrow Channel Si MOSFETs with Advanced SEG Isolation Fabricated by Ultra High Vacuum CVD

Atsushi HORI, Takehiro HIRAI, Mitsuo TANAKA (1.Semiconductor Research Center, Matsushita Electric Ind. Co.)

1994 International Conference on Solid State Devices and Materials |PDF Download

[PA-4-8] Turn-Off Transient Analysis of a DMOS Device Considering Quasi-Saturation

C. M. Liu, J. B. Kuo (1.Dept. of Electrical Eng., Rm. 338, National Taiwan University)

1994 International Conference on Solid State Devices and Materials |PDF Download

[PA-4-9] New Scaling Scenario for Channel Hot Electron Type Flash EEPROM

S. Ueno, H. Oda, N. Ajika, M. Inuishi, N. Tsubouchi (1.ULSI Laboratory, Mitsubishi Electric Corporation)

1994 International Conference on Solid State Devices and Materials |PDF Download

[PA-4-10] Suppression of Leakage Current in Polysilicon NMOS Thin Film Transistors Using NH3 Annealing

Deuk-Sung Choi, Gi-Young Yang, Chul-Hi Han, Choong-Ki Kim (1.Department of Electrical Engineering, Korea Advanced Institute of Science Technology)

1994 International Conference on Solid State Devices and Materials |PDF Download

[PA-4-11] Successful Hydrogenation Using Furnace-Annealing for High Quality Poly-Si TFTs

Masamichi Okamura, Seiiti Shirai, Tadashi Serikawa (1.NTT Interdisciplinary Research Laboratories)

1994 International Conference on Solid State Devices and Materials |PDF Download

[PA-4-12] Very Low Temperature Deposition of Micro/Polycrystalline Si Films Made by Hydrogen Dilution with PE-CVD and ECR-CVD

K. C. Wang, Y. L. Jiang, T. R. Yew, H. L. Hwang (1.Dept. of Elec. Eng., National Tsing-Hua University, 2.Dept. of Elec. Eng., National Chung-Hsing University, 3.Materials Science Center, National Tsing-Hua University)

1994 International Conference on Solid State Devices and Materials |PDF Download

[PA-4-13] 20% Reduction Both of Cell Area and of Mask Layers in Simplified TFT-SRAM Process

Akio Kawamura, Tomohiko Tateyama, Kazuyo Nakamura, Takashi Wada, Hiroshi Ohki, Akira Ishihama, Katsuji Iguchi, Keizo Sakiyama (1.VLSI Development Laboratories, SHARP Corporation)

1994 International Conference on Solid State Devices and Materials |PDF Download

[PA-4-14] Computer Simulation and Measurement of Capacitance Voltage Characteristics from Quantum Wire Devices of Trench-Oxide MOS Structure

Tetsuya TSUKUI, Shunri ODA (1.Department of Physical Electronics, Tokyo Institute of Technology)

1994 International Conference on Solid State Devices and Materials |PDF Download

[PA-4-15] DC Performance of a Tunnel MIS Emitter Auger Transistor

I. V. Grekhov, A. F. Shulekin, M. I. Vexler

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-4-1] Quantized Conductance of a Silicon Wire Fabricated Using SIMOX Technology

Y. Nakajima, Y. Takahashi, S. Horiguchi, K. Iwadate, H. Namatsu, K. Kurihara, M. Tabe (1.LSI Laboratories, Nippon Telegraph and Telephone Co., Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF Download

340 results (171 - 180)

« Prev
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Next »

▲