[D-8-3] Characterization of Phosphorus Pile-Up at the SiO2/Si Interface

Yusuke Yoshimura, Kanta Ono, Hiroshi Fujioka, Yoshiyuki Sato, Satoshi Maeyama, Yuji. Baba, Kenji Yoshii, Teikichi A. Sasaki, Masaharu Oshima (1.Department of Applied Chemistry, The University of Tokyo, 2.NTT Laboratories, 3.Japan Atomic Energy Research Institute)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-8-4] Stress Elimination of LPCVD Silicon Nitride Films by Low-Dose Ion Implantation

Ichiro Yamamoto, Shozo Nishimoto (1.ULSI Device Development Laboratories, NEC Corporation)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-9-1] A New Route to Reduce Remote Impurity Scattering in Modulation Doped Quantum Wells with Very High Conductivity

K.-J. Friedland, R. Hey, H. Kostial, K. H. Ploog (1.Paul-Drude-Institut fur Festkorperelektronik)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-9-2] High-Speed and Low-Power D-FF Employing MOBILEs (Monostable-Bistable Transition Logic Elements)

Koichi Maezawa, Hideaki Matuzaki, Tomoyuki Akeyoshi, Jiro Osaka, Taiichi Otsuji, Masafumi Yamamoto (1.NTT System Electronics Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-9-3] Input Power Dependence of Large-Signal Microwave Characteristics of Resonant-Tunneling High Electron Mobility Transistors

Hiroyuki Fukuyama, Koichi Maezawa, Masafumi Yamamoto, Hiroshi Okazaki, Masahiro Muraguchi (1.NTT System Electronics Laboratories, 2.NTT Wireless Systems Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-9-4] Crucial Role of Extremely Thin AlSb Barrier Layers in InAs/AlSb/GaSb/AlSb/InAs Resonant Interband Tunneling Diodes

Hiroto Kitabayashi, Takao Waho, Masafumi Yamamoto (1.NTT System Electronics Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-9-5] Electroluminescence Measurement of n Self-Aligned GaAs MESFETs

Hiroyuki Niwa, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani Hajime Yamazaki, Toru Taniguchi (1.Department of Quantum Engineering, Nagoya University, 2.Japan Radio Co., Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-9-6] High Performance of W-B-N Schottky Contact to GaAs

Yong Tae Kim, Chang Woo Lee, Dong Joon Kim (1.Semiconductor Materials Research Lab., Korea Institute of Science and Technology, 2.Department of Physics, Kookmin University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-9-7] Electrical and Microstructural Analyses on Pd/Ge-Based Ohmic Contact to n-InGaAs

Il-Ho Kim, Sung Ho Park, Jwayeon Kim, Jong-Min Lee, Tae-Woo Lee, Moon Pyung Park (1.Semiconductor Div., Electronics and Telecommunications Research Institute, 2.Dept. of Materials Engineering, Hoseo University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-9-8] Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's De-Hydrogenated by an Anneal After Emitter Mesa Formation

Kenji Kurishima, Shoji Yamahata, Hiroki Nakajima, Hiroshi Ito (1.NTT System Electronics Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

287 results (201 - 210)

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