[C-10-4] Fabrication of Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistor (MEFISFET) Using Pt-SrBi2Ta2O9-Y2O3-Si Structure

Ho Nyung Lee, Yong Tae Kim, Chang Woo Lee, Myoung-Ho Lim, T. S. Kalkur (1.Semiconductor Materials Laboratory, Korea Institute of Science and Technology, 2.Department of Physics, Korea University, 3.Department of Electrical and Computer Eng., Colorado State University at Colorado Springs)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-10-5] Electrical Characteristics of Neuron Pulse Oscillation Circuits Using Complementary Unijunction Transistors and MOSFETs

Sung-Min Yoon, Yuji Kurita, Eisuke Tokumitsu, Hiroshi Ishiwara (1.Precision and Intelligence Laboratory, Tokyo Institute of Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-10-6] An Adaptive Silicon Retina Performing an Edge Extraction with a MOS-Type Spatial Wiring and Smart Pixel Circuits

Hitoshi Ikeda, Kiyotaka Tsuji, Tetsuya Asai, Hiroo Yonezu, Jang-Kyoo Shin (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)

1997 International Conference on Solid State Devices and Materials |PDF Download

[C-10-7] Experimental Pattern Recognition System Using Bidirectional Optical Bus Lines

Takeshi Doi, Akihito Uehara, Yoshiyuki Takahashi, Shin Yokoyama, Atsushi Iwata, Masataka Hirose (1.Faculty of Engineering, Hiroshima University, 2.Research Center for Nanodevices and Systems, Hiroshima University)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-7-1] Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon

Manabu Itsumi (1.NTT System Electronics Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-7-2] Medium Field Breakdown Following Local Tunneling Current on MOS Capacitor Containing Grown-in CZ Crystal Defects

Masaro Tamatsuka, Zbigniew Radzimski, George A. Rozgonyi, Satoshi Oka, Masahiro Kato, Yutaka Kitagawara (1.Department of Materials Science and Engineering, North Carolina State University, 2.SEH Isobe R&D Center, Shin-Etsu Handotai Co., Ltd., 3.SEH America, Inc.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-7-3] Influence of Wafer Material on Defect Generation During Deep Submicron LOCOS Process

Nobuyuki Kawakami, Yasuyuki Aoki, Toshihiro Kugimiya, Kentaro Shibahara, Shin Yokoyama (1.Research Center for Nanodevices and Systems, Hiroshima University, 2.Electronics and Information Technology Laboratory, Kobe Steel Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-7-4] The Analysis of Defective Cell Induced by COP in 0.3 microns Technology Node DRAM

Masaya Muranaka, Masashi Miura, Hidetoshi Iwai, Masao Kawamura, Yoshitaka Tadaki, Toshiyuki Kaeriyama (1.ULSI Development Dept., Hitachi ULSI Engineering Corp., 2.Device Development Center Hitachi Ltd., 3.Manufacturing Capability Development, Semiconductor Group, Texas Instruments Inc., located at Device Development Center, Hitachi Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-8-1] Boron Diffusion in Nitrided Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs

Takayuki Aoyama, Satoshi Ohkubo, Hiroko Tashiro, Yoko Tada, Kunihiro Suzuki, Kei Horiuchi (1.Fujitsu Laboratories Ltd.)

1997 International Conference on Solid State Devices and Materials |PDF Download

[D-8-2] Improved Diffusion Barrier Capability of Thin WSiN Film by RF Bias Application during ECR Plasma Nitridation

A. Hirata, K. Machida, S. Maeyama, Y. Watanabe, H. Kyuragi (1.NTT System Electronics Laboratories, 2.NTT Basic Research Laboratories)

1997 International Conference on Solid State Devices and Materials |PDF Download