[A-4-1] Optimisation of CoSi2 Based Electrical Fuses for Redundancy Implementation in Sub-0.13 μm Embedded DRAM Applications

C. Kothandaraman, Sundar K. Iyer, J. J. Wu, Subramanian S. Iyer (1.Infineon Technologies Corp., 2.IBM Microelectronics, Semiconductor R&D centre)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-4-2] An Experimental Study of Reliability Improvement of a Semiconductor Memory Device with a Novel Self-Protected Fuse-Box Technique Using a Poly-Si Etch Stopper

Chi-Hoon Lee, Young-Hoon Park, Myoung-Hee Han, Eun-Young Min, Won-Hee Jang, Won-Sik Lee (1.Dram Process Architecture Team, Memory Product & Technology Division, Samsung Electronics Co., Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-4-3] Reverse Short Channel Effects in Shallow Trench Isolated MOSFET

Hoon Lim, Jong-Mil Youn, S. J. Hong, Jin-Ho Kim, Ki-Joon Kim, Kyeong-Tae Kim (1.SRAM Team, Samsung Electronics Co., Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-4-4] An Advanced Room Temperature Cleaning Using a pH Controlled Ozonated Ultrapure Water

Ikunori Yokoi, Geun-Min Choi, Tadahiro Ohmi (1.New Industry Creation Hatchery Center (NICHe), Tohoku University, 2.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-4-5] Strategy in Cleaning Processes for Future Materials

Geun-Min Choi, Francesco Pipia, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-5-1] Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O2/N2 Plasma

Kazuo Ohtsubo, Yuji Saito, Katsuyuki Sekine, Masaki Hiramaya, Shigetoshi Sugawa, Herzl Aharoni, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 2.At leave from the Department of Electrical and Computer Engineering, Ben-Gurion University, 3.New Industry Creation Hatchery Center, Tohoku University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-5-2] High Performance NMOS Devices Using Ultra-Thin VHP Oxynitride

T. Y. Luo, H. N. Al-Shareef, A. Karamcheti, V. H. C. Watt, G. A. Brown, M. D. Jackson, H. R. Huff, B. Evans, D. L. Kwong (1.International Sematech, Inc., 2.University of Texas at Austin, 3.Gasonics International)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-5-3] Ultrathin Fluorinated Silicon Nitride Gate Dielectric Films Formed by Plasma Enhanced Chemical Vapor Deposition Employing NH3 and SiF4

Hiroyuki Ohta, Atsushi Nagashima, Masaru Hori, Toshio Goto (1.Department of Quantum Engineering, Graduate School of Engineering, Nagoya University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-5-4] Novel Nitrogen Profile Control Technology in Ultra Thin Gate Oxide for Deep Submicron CMOS

T. Ogura, H. Kotaki, S. Kakimoto, S. Zaima, Y. Yasuda (1.Advanced Technology Research Laboratories, Sharp Corporation, 2.Center for Co-operative Research in Advanced Science and Technology, Nagoya University, 3.Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-5-5] Low Temperature Gate Oxidation MOS Transistor Produced by Kr/O2 Microwave Excited High-Density Plasma

Tatsufumi Hamada, Yuji Saito, Katsuyuki Sekine, Herzl Aharoni, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate school of Engineering, Tohoku University, 2.New Industry Creation Hatchery Center, Tohoku University, 3.At leave from the department of electrical and computer engineering, Ben-Gurion University of the Negev)

2000 International Conference on Solid State Devices and Materials |PDF Download