[G-7-3] Characterization of electrical properties of micro-Schottky contacts on ELO GaN

K. Kumada, T. Murata, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, N. Sawaki (1.Department of Quantum Engineering, Graduate School of Engineering, Nagoya University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[G-7-4] Ohmic contact to p-GaN using a strained InGaN contact layer and its thermal stability

Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi (1.NTT Basic Research Laboratories, NTT Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[G-7-5] GaN Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrode

Yan Kuin Su, Fuh Shyang Juang, Ming-Hung Chen (1.Department of Electrical Engineering, National Cheng Kung University, 2.Department of Electro-Optics Engineering, National Huwei Institute of Technology)

2002 International Conference on Solid State Devices and Materials |PDF Download

[G-8-1] ZrB2 Substrate for Nitride Semiconductors

Hiroyuki Kinoshita, Shigeki Otani, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Jun Suda, Hiroyuki Matsunami (1.Kyocera Corporation Youkaichi Plant, 2.National Institute for Material Science, Advanced Materials Laboratory, 3.Faculty of Science and Technology, High-Tech Research Center, Meijo University, 4.Department of Electronic Science and Engineering, Kyoto University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[G-8-2] Thin GaN on Sapphire with Reduced Bowing by Large Area Laser Lift-off Technique

Masahiro Ishida, Tetsuzo Ueda, Masaaki Yuri (1.Semiconductor Devices Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[G-8-3] Structural Properties on GaN Film through the Introduction of AlN Buffer Layers with Variable Growth Temperatures by Plasma-Assisted Molecular Beam Epitaxy

Byoung-Rho Shim, Hideyuki Okita, Kulandaivel Jeganathan, Mitsuaki Shimizu, Hajime Okumura (1.Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 2.Science University of Tokyo, Department of Electrical Engineering)

2002 International Conference on Solid State Devices and Materials |PDF Download

[G-8-4] GaN-Based Light-Emitting Diodes With Si-doped In0.23Ga0.77N/GaN Short-Period Superlattice Tunneling Contact Layer

C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, J. M. Tsai (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 2.Optical Science Center, National Central University, 3.South Epitaxy Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[G-8-5] Highly Transparent Structure for Nitride Ultraviolet Light Emitting Diodes

Toshio Nishida, Tomoyuki Ban, Naoki Kobayashi (1.NTT Basic Research Laboratories, NTT Corporation, 2.NEL TechnoSupport)

2002 International Conference on Solid State Devices and Materials |PDF Download