[LB-1-2] Plasma Nitridation Technique for the Formation of Thermally Stable Hf-silicate Gate Dielectric with Controlled Nitrogen Profile

Akio Kaneko, Yoshiki Kamata, Mizuki Ono, Masato Koyama, Akira Nishiyama, Yuichi Kamimuta, Chie Hongo, Akira Takashima, Dawei Gao, Seiji Inumiya, Kazuhiro Eguchi, Mariko Takayanagi (1.Advanced LSI Technology Laboratory, Environmental Engineering and Analysis Center, Toshiba Corporation, 2.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 3.SoC Research & Development Center, Semiconductor Company, Toshiba Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[LB-1-3] Hygroscopic nature of Lanthanide oxide (Ln2O3) and its effect on electrical properties of Ln2O3

Sanghun Jeon, Myungjun Cho, Hyunsang Hwang (1.Department of Materials Science and Engineering, Kwangju Institute of Science and Technology)

2002 International Conference on Solid State Devices and Materials |PDF Download

[LB-1-4] Fabrication and characterization of thin film spiral inductors toward a realization of variable impedance devices

Hiroki Funato, Michihiko Suhara, Tsugunori Okumura (1.Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[C-7-1] Methodology for Accurate C-V Measurement of Gate Insulators below 1.5nm EOT

Hiroyuki Suto, Yasushi Okawa, Mariko Takayanagi, Hideyuki Norimatsu, Yoshiaki Toyoshima (1.SoC Research and Development Center, Toshiba Corporation Semiconductor Company, 2.Hachioji Semiconductor Test Division, Agilent Technologies Japan, Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[C-7-2] Mechanisms of Nitrogen Segregation and Hole Trap Generation at the Interface of SiO2/Si(100)

Takahiro Yamasaki, Chioko Kaneta (1.Fujitsu Laboratories Limited)

2002 International Conference on Solid State Devices and Materials |PDF Download

[C-7-3] Impact of Nitrogen Profile on Negative-Bias Temperature Instability and CMOS Performance

M. Terai, T. Yamamoto, K. Watanabe, M. Togo, K. Masuzaki, N. Ikezawa, T. Tatsumi, T. Mogami (1.Silicon Systems Research Labs., NEC Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[C-7-4] Bias and Temperature Dependent Reliability Issues in a 0.18um Generation CMOS Multi-Oxide SoC Technology

S.-J. Chen, C.-C. Lin, S. S. Chung, J.-C. Lin, C.-H. Chu (1.Department of Electronic Engineering, National Chiao Tung University, 2.UMC)

2002 International Conference on Solid State Devices and Materials |PDF Download

[C-8-1] Band Offset Energies in Zirconium Silicate Alloys

Gerald Lucovsky, Bruce Rayner, Yu Zhang, Guenther Appel, Jerry Whitten (1.North Carolina State University, Department of Physics)

2002 International Conference on Solid State Devices and Materials |PDF Download

[C-8-2] Depth Profiling of High-K Dielectric/Si Interfacial Transition Layer

T. Shiraishi, T. Nakamura, K. Takahashi, I. Kashiwagi, C. Ohshima, H. Nohira, S. Ohmi, H. Iwai, T. Hattori (1.Musashi Institute of Technology, 2.Tokyo Institute of Technology)

2002 International Conference on Solid State Devices and Materials |PDF Download

[C-8-3] Photoemission Study of Aluminum Oxynitride/Si(100) Heterostructures--Chemical Bonding Features and Energy Band Lineup--

Atsushi Suyama, Hirokazu Yokoi, Masahiro Narasaki, Wataru Mizubayashi, Hideki Murakami, Seiichi Miyazaki (1.Graduate School of Advanced Sciences of Matter, Hiroshima University)

2002 International Conference on Solid State Devices and Materials |PDF Download