[P9-11] An Efficient Unified Modeling of I-V Characteristics of SOI Transistors

M. Maddah, S. Bolouki, A. Afzali-Kusha, Mahmoud El Nokali (1.ECE Department, University of Tehran, 2.EE Department, University of Pittsburgh)

2002 International Conference on Solid State Devices and Materials |PDF Download

[LP9-1] Characterization of traps at SOI/BOX interface by back gate transconductance characteristics in SOI MOSFETs

Y. Nakajima, H. Tomita, K. Aoto, N. Ito, T. Hanajiri, T. Toyabe, T. Morikawa, T. Sugano (1.Bio-nanoelectronics Research Center, Toyo Univ.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[LP9-2] Low/very low dose and multi-buried oxide layers SIMOX materials formed from appropriate dose-energy matches

Meng Chen, Xi Wang Xiang Wang, Yeming Dong, Xianghua Liu, Wangbin Yi, Jing Chen (1.Shanghai Simgui Technology Co., Ltd., 2.Shanghai Institute of Microsystem and Information Technology)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P10-1] Erratic bits in Flash Memories under Fowler-Nordheim programming

Andrea Chimenton, Paolo Pellati, Piero Olivo (1.Dipartimento di Ingegneria, Universita' di Ferrara)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P10-2] A Novel Soft-program Scheme for More than 2-bits Multi-level Cell Flash Design

T. H. Fan, C. C. Yeh, T. C. Lu, Sam Pan (1.Macronix International Co. Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P10-3] AHE: A New Low Voltage/High Speed Programming Scheme for Both N- and P-Channel Flash EEPROM's

Steve S. Chung, Y. J. Chen, T. C. Chuang, H. H. Chen, Gary Hong (1.Department of Electronic Engineering, National Chiao Tung University, 2.UMS)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P10-4] Application of Cell Model to Adaptive Programming in SSI Flash

Chun-Mai Liu, Lawrence D. Engh, Albert V. Kordesch (1.Winbond Electronics Corporation of America)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P10-5] Uniform and Reproducible MOCVD of Pb(Zr,Ti)O3 Thin Films on 8"φ Substrate for FeRAM Production

Takehito Jimbo, Masahiko Kajinuma, Takeshi Masuda, Takakazu Yamada, Hiroto Uchida, Masaki Uematsu, Koukou Suu, Michio Ishikawa (1.ULVAC Inc., Institute for Semiconductor Technologies, 2.ULVAC Inc., Semiconductor Equipment Division 1)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P10-6] A Ferroelectric Sr2(Ta1-x,Nbx)2O7 with a Low Dielectric Constant by Plasma PVD and Oxygen Radical Annealing

Ichirou Takahashi, Hiroyuki Sakurai, Atsuhiko Yamada, Kiyoshi Funaiwa, Kentaro Hirai, Shinichi Urabe, Tetsuya Goto, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 2.Specialty Products Division, UBE INDUSTRIES, LTD, 3.New Industry Creation Hatchery Center, Tohoku University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P10-7] A Significant Improvement in Memory Retention of MFIS Structure for 1T-type Ferroelectric Memory by Rapid Thermal Annealing

Minoru Noda, Kazushi Kodama, Itaru Ikeuchi, Mitsue Takahashi, Masanori Okuyama (1.Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University)

2002 International Conference on Solid State Devices and Materials |PDF Download