[F-2-2] Impedance analysis of a radio-frequency single electron transistor

H. D. Cheong, T. Fujisawa, T. Hayashi, Y. H. Jeong, Y. Hirayama (1.NTT Basic Research Laboratories, NTT Corporation, 2.Pohang University of Science and Technology, Dept. of Electronic and Electrical Eng., 3.CREST)

2002 International Conference on Solid State Devices and Materials |PDF Download

[F-2-3] Tunneling Mode Dependence of Current-Voltage Characteristics in Si/SiO2 Resonant Tunneling Diodes

Masanori Iwasaki, Yasuhiko Ishikawa, Hiroya Ikeda, Michiharu Tabe (1.Research Institute of Electronics, Shizuoka University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[F-2-4] Programmable conductivity of silicon nanowires with side gates by surface charging

T. Matsukawa, S. Kanemaru, M. Masahara, M. Nagao, H. Tanoue, J. Itoh (1.Nanoelectronics Research Inst., AIST, 2.Core Research for Evolutional Science and Technology Program (CREST))

2002 International Conference on Solid State Devices and Materials |PDF Download

[F-2-5] Tunneling Barrier Structure in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors

M. Saitoh, H. Majima, T. Hiramoto (1.Institute of Industrial Science, University of Tokyo)

2002 International Conference on Solid State Devices and Materials |PDF Download

[F-2-6] Threshold Voltage of Si Single-Electron Transistor

Akira Fujiwara, Seiji Horiguchi, Masao Nagase, Yasuo Takahashi (1.NTT Basic Research Laboratories, NTT Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[G-1-1] Mass Production Technology of MOVPE for InP, GaN and Progressed GaAs Related Materials

Yohei Otoki, Shinjiro Fujio (1.Semiconductor Engineering Dept., Hitachi Cable)

2002 International Conference on Solid State Devices and Materials |PDF Download

[G-1-2] Epitaxial Manufacturing Outlook for Microwave Industry

Norio Hayafuji, Yong-Yin Chen, Jenq-Shinn Wu, Jiun-Tsuen Lai, Chin-Kun Peng (1.Procomp Informatics Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[G-1-3] InP-Based HEMTs with a Very Short Gate-Channel Distance

Akira Endoh, Yoshimi Yamashita, Keisuke Shinohara, Kohki Hikosaka, Toshiaki Matsui, Satoshi Hiyamizu, Takashi Mimura (1.Fujitsu Laboratories Ltd., 2.Communications Research Laboratory, 3.Graduate School of Engineering Science, Osaka University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[G-1-4] Comparison of electrical characteristics of metamorphic HEMTs with InP HEMTs and PHEMTs

K. Kawada, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, M. Takakusaki, H. Nakata (1.Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, 2.Toda Plant, Nikko Materials)

2002 International Conference on Solid State Devices and Materials |PDF Download

[G-1-5] Doping Design and Two-Dimensional Electron Gas Density in AlGaN/GaN Heterostructure Field-Effect Transistors for High-Power Applications

Narihiko Maeda, Kotaro Tsubaki, Tadashi Saitoh, Naoki Kobayashi (1.NTT Basic Research Laboratories, NTT Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

428 results (51 - 60)

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