[B-8-2] Dose Dependent Etching Selectivity in SiO2 by Focused Ion Beam

Taizoh Sadoh, Hiroomi Eguchi, Atsushi Kenjo, Masanobu Miyao (1.Department of Electronics, Kyushu University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-8-3] Evaluation of Surface Contamination by Noncontact Capacitance Method under UV Irradiation

Motohiro Kohno, Toshikazu Kitajima, Sadao Hirae, Shin Yokoyama (1.Development Department, Dainippon Screen Manufacturing Co., Ltd., 2.Research Center for Nanodevices and Systems, Hiroshima University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-8-4] Quantum Chemical Molecular Dynamics Simulation on the Plasma Etching Processes

Katsumi Sasata, Toshiyuki Yokosuka, Hitoshi Kurokawa, Seiichi Takami, Momoji Kubo, Akira Imamura, Tadashi Shinmura, Masaaki Kanoh, Akira Miyamoto (1.Department of Materials Chemistry, Graduate School of Engineering, Tohoku University, 2.Hiroshima Kokusai Gakuin University, 3.Corporate Manufacturing Engineering Center, Toshiba Corporation, 4.New Industry Creation Hatchery Center, Tohoku University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-9-1] Suppression of Short Channel Hump of nMOSFET Using NF3-Added ILD HDP Process

Joo-Seog Park, Se-Kyung Choi, Myung-Jong Bong, Seok-Chul Chung, Hyuck-Chai Jung, Nam-Sung Kim, Tae-Un Youn, Young-Woo Kwon, Il-Gweon Kim (1.Device&PI-BC Team, Memory R&D Division, Hynix Semiconductor Inc.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-9-2] Investigation of the Ti-Doped Ta2O5 Films from PET and TET Cocktail Source for DRAM Capacitor

K. J. Nam, K. C. Kim, J. S. Lim, K. V. Lim, Y. S. Kim, S. T. Kim, U. I. Chung, J. T. Moon (1.Process Development Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-9-3] Impact of Thermal Budget Reduction on MOSFET Performance to Achieve High-speed and High-density DRAM-based System LSI

E. Yoshida, T. Miyashita, H. Nitta, M. Tanaka, K. Ishii, Y. Akasaka, P. H. Chou, K. Hashimoto, Y. Kohyama, T. Tanaka, Y. Nara (1.Fujitsu Laboratories Ltd., 2.Toshiba Corporation Semiconductor Company, 3.Winbond Electronics Corp.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-9-4] Performance of DRAM Cell Transistor with TDSE (Thermal Desorption Silicon Etching) and Selective Si Channel Epi techniques

C.-S. Kim, B. C. Lee, J. R. Ryu, D.-H. Lee, J.-H. Ku, S. Choi, U. I. Chung, J. T. Moon (1.Process Development Team, Memory Division, Samsung Electronics Co., Ltd., 2.Advanced Process Development Project, System LSI Division, Samsung Electronics Co., Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-9-5] Highly Reliable DRAM Technology for ASM with Dual Nitrogen Concentration Gate Oxynitrides using Selective Nitrogen Implantation

Taro Sugizaki, Atsushi Murakoshi, Tetsu Tanaka, Ryota Katsumata, Toshiro Nakanishi, Yasuo Nara (1.Fujitsu Laboratories Ltd., 2.Toshiba Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-9-6] Investigation of the Contact Resistance between Ru and Ti/TiN in M1/Plate Contacts of RIS (Ruthenium Insulator Silicon) Capacitor

Ju Young Yun, Byung Hee Kim, Seong Geon Park, Jung Hun Seo, Jong Myeong Lee, Sang Bom Kang, Jeong Hee Chung, Gil Heyun Choi, U In Chung, Joo Tae Moon (1.Process Development Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[LB-1-1] Analysis of Transconductance Degradation after Endurance Cycling of Uniform F-N Flash Memories

Y. Moriyama, K. Takahashi, K. Ueda, M. Kusumi, K. Sato, I. Matsuo (1.ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download