[B-4-4] Implementation of electrically programmable fuse (eFUSE) in CMOS technologies using electromigration

S. Sundar Kumar Iyer, C. Kothandaraman, Norman Robson, Danny Shum, James P. Rice, Subramanian S. Iyer (1.IBM Microelectronics, Semiconductor R&D Centre, 2.Infineon Technologies Corp.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-5-1] Novel Binary Alloy Gate Electrodes for Metal Gate MOS Devices

Chih-Feng Huang, Bing-Yue Tsui (1.Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-5-2] First-Principles Calculation of High Strain-Induced Leakage Current in Silicon Dioxide used for Gate Dielectrics

H. Moriya, T. Iwasaki, H. Miura (1.Mechanical Engineering Research Laboratory, Hitachi, Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-5-3] Negative-Bias-Temperature Instability in Ultra Thin Nitride/Oxide Stack Gate Dielectric

Da-Yuan Lee, Horng-Chih. Lin, Wan-Ju Chiang, Chi-Chun Chen, Chi-Yuan Lin, Tiao-Yuan Huang, Tahui Wang, Mong-Song Liang (1.Institute of Electronics, National Chiao Tung University, 2.National Nano Device Laboratories, 3.Taiwan Semiconductor Manufacturing Company Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-5-4] Low temperature oxidation of Si(100) with ozone radicals: Chemical Reaction Mechanism and Surface Stress

T. Narushima, A. N. Itakura, M. Kitajima, K. Miki (1.Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), 2.Materials Engineering Laboratory and Nanomaterials Laboratory, National Institute for Materials Science (NIMS))

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-6-1] Drastic Leakage Suppression by Through-Oxide Arsenic Pre-SALICIDE Implantation for CoSi2 Formation on Shallow n+/p Junctions

M. Tsuchiaki, A. Murakoshi, C. Hongo (1.Corporate Research & Development Center, Toshiba Corporation, 2.Process & Manufacturing Engineering Center, Toshiba Semiconductor Company)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-6-2] Influence of Ge and C for reaction in Ni/p+-Si1-x-yGexCy/Si(100) contacts

Yoshinori Tsuchiya, Osamu Nakatsuka, Akira Sakai, Shigeaki Zaima, Junichi Murota, Yukio Yasuda (1.Graduate School of Engineering, Nagoya University, 2.Center for Integrated Research in Science and Engineering, Nagoya University, 3.Center of Cooperative Research in Advanced Science and Technology, Nagoya University, 4.Research Institute of Electrical Communication, Tohoku University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-6-3] A New Plasma Dry Cleaning Method Applied to Contact and Gate Pre Cleaning

Kotaro Miyatani, Kenichi Nishizawa, Yasuo Kobayashi, Yoshihide Tada (1.Technology Development Center, Tokyo Electron Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[C-3-1] High Performance Organic Nonvolatile Memory Device--a Direct Challenge to the Si Technology

Yang Yang, Liping Ma, Jie liu, Seungmoon Pyo, Qianfei Xu (1.Department of Materials Science and Engineering, University of California at Los Angeles)

2002 International Conference on Solid State Devices and Materials |PDF Download

[C-3-2] Organic thin-film transistors for driving organic light emitting diode

Masatoshi Kitamura, Tadahiro Imada, Yasuhiko Arakawa (1.Research Center for Advanced Science and Technology, University of Tokyo)

2002 International Conference on Solid State Devices and Materials |PDF Download