[P1-8] A Discrete Time Cellular Neural Network based on Negative Differential Resistance Devices

Sohei Niwa, Shigeru Kishimoto, Koichi Maezawa, Takashi Mizutani (1.Graduate School of Engineering, Nagoya University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P2-1] Low-leakage 0.11 μm CMOS for Low-Power RF-ICs and SRAMs Applications

Y. S. Lin, C. S. Chang, C. C. Wu, W. M. Chen, J. J. Liaw, C. H. Diaz (1.Department of Electrical Engineering, National Chi-Nan University, 2.Taiwan Semiconductor Manufacturing Company)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P2-2] Analysis of the Leakage Mechanism of Sub-110nm DRAM Shallow Junctions with Titanium and Cobalt Silicided Contacts after Heat Budget

S. B. Kang, H. S. Park, K. J. Moon, S. G. Yang, G. H. Choi, U. I. Chung, J. T. Moon (1.Process and Development Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P2-3] 1.0V High Performance Device with Reduced Parasitic Junction Capacitance and Suppressed Junction Leakage Current for 0.1μm Technology

Hyun Sik Kim, Shiang Yang Ong, Manju Sarkar, Young Way Teh, Shesh Mani Pandey, Francis Benistant, Elgin Quek, Mousumi Bhat (1.Department of Technology Development, Chartered Semiconductor Manufacturing Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P2-4] Influence of Gate-to-Source Tunneling Current on Hot-Carrier Reliability Testing in MOSFETs with Ultra-Thin Gate Oxide

Jone F. Chen, Chih-Pin Tsao, T.-C. Ong (1.Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, 2.Logic Technology Division, TSMC)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P2-5] Nano-Roughness Enhanced Reliability of MOS Tunneling Diodes

F. Yuan, C.-H. Lin, C.-R. Shie, K.-F. Chen, M. H. Lee, C. W. Liu (1.Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P2-6] An Optimization of the Anti-punchthrough Implant for ESD Protection Circuit Design

Yiming Li, Jam-Wem Lee, S. M. Sze (1.National Nano Device Laboratories, 2.National Chiao Tung University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P2-7] Second Breakdown of 18V GGNMOS induced by Kirk Effect Under ESD

Byung-Chul Jeon, Seung-Chul Lee, Min-Koo Han (1.#50,301-1115, School of Electrical Eng., Seoul Nat'l Univ.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P2-8] A New Trenched Source power MOSFET Improving Avalanche Energy

Soo-Seong Kim, Jae-Keun Oh, Min-Koo Han (1.School of Electrical Eng. & Computer Science #50, Seoul National University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[P2-9] Guard-ring design for high-performance RF CMOS

K. Kojima, T. Ohguro, H. S. Momose, Y. Toyoshima (1.Semiconductor Company, Toshiba Corp.)

2002 International Conference on Solid State Devices and Materials |PDF Download

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