[D-7-2] Ultra Thin Body Silicon-On-Insulator (UTB SOI) MOSFET with Metal Gate Work-function Engineering for sub-70 nm Technology Node

Daewon Ha, Pushkar Ranade, Yang-Kyu Choi, Jeong-Soo Lee, Tsu-Jae King, Chenming Hu (1.University of California at Berkeley, Department of Electrical Engineering and Computer Science)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-7-3] Body Potential Design Using Narrow and Shallow Halo to Reduce the Floating Body Effect of SOI-MOSFET

Risho Koh, Yukishige Saito, Hisashi Takemura, Kohichi Arai, Mitsuru Narihiro, Hitoshi Wakabayashi, Kiyoshi Takeuchi, Tohru Mogami (1.Silicon Systems Research Laboratories, NEC Corporation, 2.R&D Support Center, NEC Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-7-4] High Performance Poly-Si CMOS Circuits Fabricated Using Metal Imprint Technology

Kenji Makihira, Masahito Yoshii, Tanemasa Asano (1.Center for Microelectronic Systems, Kyushu Institute of Technology)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-8-1] Characterization and Challenges of SOI Wafer Material at Present and its Perspective

Christophe Maleville, Andre-Jacques Auberton-Herve (1.SOITEC SA; Parc Techno. Des Fontaines)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-8-2] Reduction of Pattern-Edge Defects in Partial SOI by LII (Light-Ion Implantation) Technique

Atsushi Ogura (1.Silicon Systems Res. Labs, NEC Corp.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-8-3] Effective Metal Gettering Technique using Polysilicon Substrate Contact Structure for SOI Devices

Hideki Naruoka, Toshiaki Iwamatsu, Takashi Ipposhi, Nobuyoshi Hattori, Yasuo Inoue, Yoji Mashiko (1.ULSI Development Center, Mitsubishi Electric Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-8-4] Silicon-On-Low-K Substrate(SOLK) Technology for High-Speed and Low-Power Devices

Y. Yamada, Y. Igarashi, T. Morooka, T. Nakamura, J. C. Shim, H. Kurino, M. Koyanagi (1.Department of Machine Intelligence and Systems Engineering, Tohoku University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-9-1] Dynamic Floating Body Effects in Fully Depleted SOI MOSFET's

Keiji Nagase, Kazuya Fujimoto, Motoharu Yamazaki, Seiji Suzuki, Tsuneo Shinohara, Kouzou Hoshino (1.Design Technology Development Center, Integrated Circuits Group, SHARP Corporation)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-9-2] Current Drive Improvement by Enhanced Body Effect Factor Due to Finite Inversion Layer Thickness in Variable Threshold Voltage CMOS

Toshiharu Nagumo, Toshiro Hiramoto (1.Institute of Industrial Science, University of Tokyo)

2002 International Conference on Solid State Devices and Materials |PDF Download

[D-9-3] FD-SOI MOSFET with Self-Aligned Gate Formed on Recessed Channel

Yoshihiro Soutome, Kohji Isaji, Hitoshi Aoki, Akio Kawamura, Hideo Komiya, Katsuji Iguchi (1.Sharp Corporation, Production Engineering Center, IC Group)

2002 International Conference on Solid State Devices and Materials |PDF Download

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