[A-2-3] Statistical Modeling of MOS Devices for Parametric Yield Prediction

Juin J. Liou, Qiang Zhang, John McMacken, J. Ross Thomson, Kevin Stiles, Paul Layman (1.School of EE and CS, University of Central Florida, 2.Modeling and Simulation Group, Agere Systems)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-2-4] Modeling and Simple Simulation Method of Stacked Spiral Inductors

Hideki Shima, Toshimasa Matsuoka, Kenji Taniguchi (1.Department of Electronics and Information Systems, Osaka University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[A-2-5] Analysis of Non-Quasistatic Contribution to Small-Signal Response for Deep Sub-μm MOSFET Technologies

S. Jinbou, H. Ueno, H. Kawano, K. Morikawa, N. Nakayama, M. Miura-Mattausch, H. J. Mattausch (1.Graduate School of Advanced Sciences of Matter, Research Center for Nanodevices and Systems, Hiroshima University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-1-1] Critical Materials Issues for High-k Gate Dielectric Integration

Robert M. Wallace (1.University of North Texas, Department of Materials Science)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-1-2] Effects of Oxynitride-Based Interface Control on HfO2 MIS Properties and FET Performance

H. Ota, N. Yasuda, T. Yasuda, Y. Morita, N. Miyata, K. Tominaga M. Kadoshima, S. Migita, T. Nabatame, A. Toriumi (1.MIRAI Project, Advanced Semiconductor Research Center (ASRC), AIST, 2.MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), National Institute of Advanced Industrial Science and Technology (AIST), 3.Department of Materials Science, School of Engineering, University of Tokyo)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-1-3] Study on Densification and Oxidation Mechanism during PDA for Minimum EOT of Ultrathin CVD HfO2

Yoshinao Harada, Masaaki Niwa, Dim-Lee Kwong (1.ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 2.Micro Electronics Research Center, The University of Texas at Austin)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-1-4] Impact of Hf metal pre-deposition in CVD- and PVD-HfO2 dielectrics

Kazuhiko Yamamoto, Masayuki Asai, Shigenori Hayashi, Sadayoshi Horii, Masaaki Niwa, Hironobu Miya (1.ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd., 2.Semiconductor equipment system laboratory, Hitachi Kokusai Electric Inc.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-1-5] A Theoretical Study of SiO2-rich Zr and Hf Silicates as High-k Gate Insulators

Tomoyuki Hamada, Takuya Maruizumi, Yuuichi Matsui, Masahiko Hiratani (1.Advanced Research Laboratory, Hitachi Ltd., 2.Central Research Laboratory, Hitachi, Ltd.)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-2-1] ADHESION AND RELIABILITY IN THIN-FILM STRUCTURES CONTAINING CU AND LOW K MATERIALS: EXPERIMENTS AND MULTI-SCALE SIMULATIONS

Reinhold H. Dauskardt (1.Department of Materials Science and Engineering Stanford University)

2002 International Conference on Solid State Devices and Materials |PDF Download

[B-2-2] Structure control of periodic porous silica film for low-k application

Kazuhiro Yamada, Yoshiaki Oku, Nobuhiro Hata, Shozo Takada, Takamaro Kikkawa (1.MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 2.MIRAI Project, Advanced Semiconductor Research center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 3.Research Center for Nanodevices and Systems, Hiroshima University)

2002 International Conference on Solid State Devices and Materials |PDF Download