The Japan Society of Applied Physics

566 results (231 - 240)

[F-8-1] Process Integration of Low-Power and High-Speed 16Mb MRAM using Multi-Layer Wiring Technology

T. Kajiyama, S. Miura, Y. Asao, T. Ueda, H. Aikawa, M. Iwayama, K. Hosotani, M. Amano, M. Yoshikawa, K. Tsuchida, S. Ikegawa, T. Kishi, N. Shimomura, N. Ohshima, H. Hada, A. Nitayama, S. Tahara, H. Yoda (1.Center for Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation, 2.Corporate Research & Development Center, Toshiba Corporation, 3.System Devices Research Laboratories, NEC Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[F-8-2] New Magnetic Nano-Dot Memory with FePt Nano-Dots

Cheng-Kuan Yin, Ji-Chel Bea, Mariappan Murugesan, Mikihiko Oogane, Takafumi Fukushima, Tetsu Tanaka, Kenji Natori, Masanobu Miyao, Mitsumasa Koyanagi (1.Dept. Bioengineering and Robotics, Tohoku University, 2.Japan Science and Technology Agency (JST), 3.Department of Applied Physics, Graduate School of engineering, Tohoku University, 4.Dept. Institute of Applied Physics, Tsukuba University, 5.Dept. Electronics, Kyushu University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[F-8-3] Optimization of Ring Type Electrode Process for High Density PRAM

K. C. Ryoo, Y. J. Song, D. H. Kang, C. W. Jeong, J. H. Kong, J. H. Oh, D. W. Lim, S. S. Park, J. I .Kim, J. H. Kim, J. H. Park, Y. T .Oh, J. S. Kim, J. M. Shin, J. H. Park, K. W. Lee, Y. Fai, G. H. Koh, G. T. Jeong, H. S. Jeong, Kinam Kim (1.Advanced Technology Development, Semiconductor R&D Div., Samsung Electronics Co., Ltd)

2006 International Conference on Solid State Devices and Materials |PDF Download

[F-8-4] Characteristics Improvement of Phase Change Memory with Programming Pulse Width

Der-Sheng Chao, Chain-Ming Lee, Yi-Chan Chen, Philip H. Yen, Ding-Yeong Wang, Ming-Jung Chen, Shen-Chuan Lo, Hong-Hui Hsu, Wen-Han Wang, Fred Chen, Yen Chuo, Chenhsin Lien, Ming-Jer Kao, Ming-Jinn Tsai (1.Electronics and Optoelectronics Research Laboratories (EOL), ITRI, 2.Material and Chemical Research Laboratories (MCL), ITRI, 3.Institute of Electronics Engineering, National Tsing Hua University)

2006 International Conference on Solid State Devices and Materials |PDF Download

566 results (231 - 240)