Nitride Hybrid Trap Layer

Jeong-Dong Choe, Se-Hoon Lee, Jong Jin Lee, Eun Suk Cho, Youngjoon Ahn, Byoung Yong Choi, Suk Kang Sung, Jintae No, Ilsub Chung, Kyucharn Park, Donggun Park (1.Device Research Team, PD Team, Semiconductor R&D Center, Samsung Electronics Co., 2.School of Information and Communication Engineering, Sungkyunkwan University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-4-3] 2-Bit Lanthanum Oxide Trapping Layer Nonvolatile Flash Memory

Yu-Hsien Lin, Tsung-Yuan Yang, Chao-Hsin Chien, Tan-Fu Lei (1.Department of Electronics Engineering, National Chiao Tung University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-4-4] A Novel NAND Flash Technology with Selective Epitaxial Growth Plug Structure for the Improvement in HV Transistor Breakdown Voltage

Sanghun Jeon, Changseok Kang, Ukjin Roh, Chang-Hyun Lee, Yoocheol Shin, Jaesung Sim, Juhyung Kim, Jongsun Sel, Younseok Jeong, Wonseok Jung, Jungdal Choi, Kinam Kim (1.Semiconductor R&D Center, Memory Business, Samsung Electronics Co., LTD.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-4-5] Ultra Low Operation Current Lateral Phase-Change Memory

You Yin, Daisuke Niida, Naoya Higano, Akihira Miyachi, Hayato Sone, Sumio Hosaka (1.Department of Nano-material Systems, Graduate School of Engineering, Gunma University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-4-6] Lateral and vertical magnetic interaction in a submicron-sized Fe monolayer and a Fe/Au/Fe trilayer ring structure

Makoto Kohda, Ken Takagi, Tetsuya Miyawaki, Kazuya Toyoda, Asaya Fujita, Junsaku Nitta (1.Department of Materials Science, Tohoku University, 2.CREST-JST)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-4-7] Low Current Reversible Resistive Switching in Bismuth Titanate Deposited by Electron Cyclotron Resonance Sputtering

Yoshito Jin, Hiroyuki Shinojima, Masaru Shimada (1.Microsystem Integration Laboratories, NTT Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-4-8] Resistive Switching Properties of SrZrO3-based Memory Films

Chun-Chieh Lin, Bing-Chung Tu, Chao-Cheng Lin, Chen-Hsi Lin, Tseung-Yuen Tseng (1.Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 2.Winbond Electronics Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-4-9] Thermal properties of NiOy resistor practically free from the ‘forming’ process

K. Kinoshita, C. Yoshida, H. Aso, M. Aoki, Y. Sugiyama (1.FUJITSU LABORATORIES LTD.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-4-10] Resistance Switching Characteristics of Binary Metal Oxides

In-Sung Park, Kyong-Rae Kim, Jinho Ahn (1.Hanyang University, Information Display Research Institute, 2.Hanyang University, Department of Information Display Engineering, 3.Hanyang University, Department of Materials Science and Engineering)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-4-11] Capacitorless DRAM Cell with Highly Scalable Surrounding Gate Structure

Hoon Jeong, Yeun Seung Lee, Sangwoo Kang, Il Han Park, Woo Young Choi, Hyungcheol Shin, Jong Duk Lee, Byung-Gook Park (1.Inter-university Semiconductor Research Center and School of Electrical Engineering, Seoul National University, ENG)

2006 International Conference on Solid State Devices and Materials |PDF Download

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