[I-2-1] Electrical Properties of Ge-Doped InSb and InAs on GaAs(111)A Substrate

J. Nishinaga, R. Harada, T. Takada, A. Kawaharazuka, Y. Horikoshi (1.School of Science and Engineering, Waseda University, 2.Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 3.Institute for Biomedical Engineering, ASMeW, Waseda University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[I-2-2] A method for suppressing deep-level emission in ZnSe/Ge/GexSi1-x/Si structure

Jui-Tai Ku, Tsung-Hsi Yang, Guangli Luo, Wu Ching Chou, Tsung-Yeh Yang, Chun-Yen Chang (1.Department of Electrophysics, National Chiao Tung University, 2.Microelectronics and Information Systems Research Center, National Chiao Tung University, 3.National Nano Device Laboratories, 4.Institute of Physics, Academia Sinica)

2006 International Conference on Solid State Devices and Materials |PDF Download

[I-2-3] Effect of Hydrogen in Zinc Oxide Thin-Film Transistor grown by MOCVD

Jungyol Jo, Ogweon Seo, Euihyuck Jeong, Hyunseok Seo, Byeonggon Lee, Yearn Ik Choi (1.Department of Electrical and Computer Engineering, Ajou University, 2.NFC, Samsung Advanced Institute of Technology, 3.CDA Co., Ltd.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[I-2-4] The Effect of As2 and As4 Molecule Beam Species on MBE Grown GaNxAs1-x/GaAs MQW by Modulated N Radical Beam Source

Masayoshi Kakino, Kensuke Fujii, Katsuhiro Takao, Hayato Miyagawa, Noriaki Tsurumachi, Hiroshi Itoh, Shunsuke Nakanishi, Hidefumi Akiyama, Shyun Koshiba (1.Faculty of Engineering, Kagawa University, 2.Institute for Solid State Physics, University of Tokyo)

2006 International Conference on Solid State Devices and Materials |PDF Download

[I-2-5] GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers

Tetsuya Akasaka, Yasuyuki Kobayashi, Toshiki Makimoto (1.NTT Basic Research Laboratories, NTT Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[I-2-6] Strong Ultraviolet Emission from InGaN/AlGaN Multi Quantum Well Grown by Multi-step Process

Hou-Guang Chen, Hsin-Hung Yao, Jung-Tang Chu, Nai-Fang Hsu, Tien-Chang Lu, Hao-Chung Kuo, Shing-Chung Wang (1.Department of Photonics & Institute of Electro-Optical Engineering National Chiao Tung University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[I-2-7] Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy

Yasuyuki Kobayashi, Hiroki Hibino, Tomohiro Nakamura, Tetsuya Akasaka, Toshiki Makimoto, Nobuo Matsumoto (1.NTT Basic Research Laboratories, NTT Corporation, 2.Shonan Institute of Technology)

2006 International Conference on Solid State Devices and Materials |PDF Download

[I-2-8L] ZnO-based semiconductors for visible light emission devices

T. Ohashi, K. Yamamoto, A. Nakamura, T. Aoki, J. Temmyo (1.Research Institute of Electronics, Shizuoka University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[I-6-1] A Practical, Systematic, Simple Method to Evaluate Speed/Bandwidth Potential of CMOS Processes for Analog Design and Related Practical Considerations

Khayrollah Hadidi (1.Microelectronics Research Laboratory, Urmia University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[I-6-2] A 0.6V Supply CMOS Amplifier Using Noise Reduction Technique of Autozeroing and Chopper Stabilization

Yoshihiro Masui, Takeshi Yoshida, Mamoru Sasaki, Atsushi Iwata (1.Graduate School of Advanced Sciences of Matter, Hiroshima University)

2006 International Conference on Solid State Devices and Materials |PDF Download

566 results (301 - 310)

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