[E-8-3] Passivation Effects of 100 nm In0.4AlAs/In0.35GaAs Metamorphic HEMT With Remote PECVD Grown Si3N4 Layer

Sungwon Kim, Kyoungchul Jang, Jinsik Lee, Jincherl Her, Kwangseok Seo (1.Seoul National Univ., School of Electrical Eng.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-8-4] Microwave Performance of Pseudomorphic HEMT with Tunable Field-Plate Voltage

Hsien-Chin Chiu, Feng-Tso Chien (1.Chang Gung University Electronics Engineering Department)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-8-5] 80nm T-Shaped Gate Metamorphic HEMTs fabricated Using Two-Step Gate Recess Process

Hyung Sup Yoon, Jae Yeob Shim, Dong Min Kang, Ju Yeon Hong, Kyung Ho Lee (1.RF Circuit Group, IT Convergence & Components Laboratory, Electronics and Telecommunications Research Institute)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-8-6] Comparative Study of DC and Microwave Characteristics of 0.12 μm T-Shaped Gate AlGaAs/InGaAs/GaAs PHEMTs Using a Hybrid and Conventional E-beam Lithography Process

Jong-Won Lim, Seok-Won Yoon, Ho-Kyun Ahn, Hong-Gu Ji, Woo-Jin Chang, Jae-Kyoung Mun, Haecheon Kim (1.IT Components & Materials Technology Research Division, IT Convergence & Components Laboratory, Electronics and Telecommunications Research Institute)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-9-1] Methods and Mechanisms for Ohmic Contacts on AlGaN/GaN HEMTs

Ilesanmi Adesida, Fitih M. Mohammed, Liang Wang, Anirban Basu, Vipan Kumar (1.Micro and Nanotechnology Laboratory, 2.Department of Electrical and Computer Engineering, 3.Department of Material Science and Engineering University of Illinois at Urbana-Champaign)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-9-2] High-temperature and UV-assisted C-V characterization of GaN MIS structures

Hiroki Kato, Marcin Miczek, Tamotsu Hashizume (1.Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-9-3] Device Isolation by Plasma Treatment for Planar Integration of E/D-mode AlGaN/GaN HEMTs

Ruonan Wang, Yong Cai, Wilson C. W. Tang, Kei May Lau, Kevin J. Chen (1.Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-9-4] Phosphorus Implantation Effects in Mg Doped GaN Epilayers

K. T. Liu, Y. K. Su, S. J. Chang, Y. Horikoshi (1.Department of Electronic Engineering, Cheng Shiu University, 2.Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 3.School of Science and Engineering, Waseda University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-9-5] ICP Reactive Ion Etching with SiCl4 Gas for Recessed Gate AlGaN/GaN HFET

K. Matsuura, D. Kikuta, J.-P. Ao, H. Ogiya, M. Hiramoto, H. Kawai, Y. Ohno (1.Institute of Technology and Science, The University of Tokushima, 2.SAMCO Inc., 3.POWDEC K. K.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-9-6] SiO2 Passivation Effects on the Leakage Current in Dual-Gate AlGaN/GaN High Electron Mobility Transistors

Min-Woo Ha, Jiyong Lim, Young-Hwan Choi, Jin-Cherl Her, Kwang-Seok Seo, Min-Koo Han (1.School of Electrical Engineering, Seoul National University)

2006 International Conference on Solid State Devices and Materials |PDF Download