[G-8-4] High Performance SiN-MIM Decoupling Capacitors with Surface-smoothed Bottom Electrodes for High-speed MPUs

Ippei Kume, Naoya Inoue, Hiroto Ohtake, Shinobu Saitoh, Naoya Furutake, Jun. Kawahara, Takeshi Toda, Toshiki Shinmura, Koujirou Matsui, Takayuki Iwaki, Koichi Ohto, Masayuki Furumiya, Yoshihiro Hayashi (1.System Devices Research Laboratories, NEC, 2.NEC Electronics)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-9-1] Reliability challenges for advanced copper low-k interconnects

Zs. Tokei, C. Bruynseraede, Y-L. Li, I. Ciofi, G. P. Beyer (1.IMEC, 2.Dept. of Electrical Engineering, Katholieke Universiteit Leuven)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-9-2] Diffusion Barrier Property of an Interface Layer Formed with Cu-Mn, Al and Mg Alloy Films on SiO2

J. Iijima, M. Haneda, J. Koike (1.Dept. of Materials Science, Tohoku University, 2.Japan Science and Technology Agency)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-9-3] Self-Formation of Ti-rich Interfacial Layers in Cu(Ti) Alloy Films

Susumu Tsukimoto, Kazuhiro ITO, Masanori Murakami (1.Kyoto Univ., Dept. of Materials Science and Engineering, Graduate School of Eng.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-9-4] New method of probing barrier integrity and low-k stability

Choong-Un Kim, D. M. Meng, W.-H. Bang, N. Michael, Y. J Park, L. Matz (1.Materials Science and Engineering, The University of Texas at Arlington, 2.Silicon Technology Development, Texas Instruments)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-9-5] An Excellent Cu Diffusion Barrier for Next Generation Multi-level Cu-interconnect

Chia-Jung Lee, Chih-Feng Huang, Bing-Yue Tsui (1.Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-9-6] Plasma-enhanced polymerization thin films as a drift barrier for Cu interconnects

Takenobu Yoshino, Jun Kawahara, Nobuhiro Hata, Yoshinori Shishida, Takamaro Kikkawa (1.MIRAI-Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology, 2.MIRAI-Association of Super-Advanced Electronics Technology (ASET), 3.Research Center for Nanodevices and Systems (RCNS), Hiroshima University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[H-1-1] Direct Silicon Bonded (DSB) Mixed Orientation Substrate for High Performance Bulk CMOS Technology

C. Y. Sung, Haizhou Yin, H. Ng, K. L. Saenger, G. Pfeiffer, V. Chan, R. Zhang, J. Li, J. A. Ott, R. Bendernagel, S. B. Ko, Z. Ren, X. Chen, V. Ku, Z. J. Luo, N. Rovedo, K. Fogel, M. Khare, G. Shahidi, S. Crowder (1.Research Division, T.J. Watson Research Center, 2.Semiconductor Research & Development Center, 3.Microelectronic Division)

2006 International Conference on Solid State Devices and Materials |PDF Download

[H-1-2] Strained-Silicon Transistors with Silicon-Carbon Source/Drain

Yee-Chia Yeo (1.Department of Electrical and Computer Engineering, National University of Singapore (NUS))

2006 International Conference on Solid State Devices and Materials |PDF Download

[H-1-3] Effect of Tensile Strain on Gate and Substrate Currents of strained-Si n-MOSFETs

T. Hoshii, S. Sugahara, S. Takagi (1.Graduate School of Frontier Science, The Univ. of Tokyo)

2006 International Conference on Solid State Devices and Materials |PDF Download