The Japan Society of Applied Physics

566 results (451 - 460)

[P-4-12] Cost-Effective and Highly Reliable 6F2 Multi-Gigabit DRAM in 60nm Technology Node for Low Power and High Performance Applications

D. Ha, J. H. Kim, T. H. An, S. S. Lee, S. H. Jang, S. Y. Kim, M. S. Kang, H. T. Kim, S. H. Lee, M. Y. Sim, W. T. Park, D. H. Han, S. M. Jeon, J. W. Park, S. H. Kim, S. H. Kwon, Y. G. Kim, Y. J. Choi, M. S. Sim, C. H. Cho, M. M. Jeong, T. W. Lee, G. Jin, W. S. Lee, B.-I. Ryu (1.Advanced Technology Development Team I, Memory Division, Semiconductor Business, Samsung Electronics Co.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-4-15L] Very low voltage operation of p-Si/Al2O3/HfO2/TiO2/Al2O3/Pt single quantum well flash memory devices with good retention

S. Maikap, P. J. Tzeng, T.-Y. Wang, S. S. Tseng, C. H. Lin, H. Y. Lee, L. S. Lee, P. W. Li, J.-R. Yang, M.-J. Tsai (1.Department of Electronic Engineering, Chang Gung University, 2.Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, 3.Department of Material Science Engineering, National Taiwan University, 4.Department of Electrical Engineering, National Central University)

2006 International Conference on Solid State Devices and Materials |PDF Download

566 results (451 - 460)