[P-1-17] Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers

Koji Eriguchi, Akira Ohno, Daisuke Hamada, Masayuki Kamei, Hiroshi Fukumoto, Kouichi Ono (1.Graduate School of Engineering, Kyoto University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-1-18] Pulsed Focused-Laser Beam Annealing of Ultra-Shallow Implanted Silicon and In Situ Dopant Activation Monitoring

Woo Sik Yoo, Kitaek Kang (1.WaferMasters, Inc.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-1-19] UV-VIS Raman Characterization of High Dose Ultra Shallow Implanted Silicon before and after Excessive Annealing

T. Sasaki, H. Minami, K. Kisoda, W. S. Yoo, M. Yoshimoto, H. Harima (1.Kyoto Institute of Technology, 2.Wakayama University, 3.WaferMasters, Inc.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-1-20] Activation of Implanted Phosphorus Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers

Naoki Sano, Toshiyuki Sameshima, Yasuhiro Matsuda, Yasunori Andoh (1.Hightec Systems Corporation, 2.Tokyo University of Agriculture and Technology, 3.Nissin Ion Equipment Co., Ltd)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-1-21] Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructures

Akito Hara (1.Electronic Engineering, Tohoku-Gakuin University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-1-22] Schottky Barrier Height Modulation for Nickel Silicide on n-Si (100) using Antimony (Sb) Segregation

Hoong-Shing Wong, Lap Chan, Ganesh Samudra, Yee-Chia Yeo (1.Silicon Nano Device Lab., Department of Electrical and Computer Engineering, National University of Singapore)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-1-23] In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET

Tetsuya Ikuta, Yuki Miyanami, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake (1.Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 2.Graduate School of Engineering, Osaka University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-1-24] Top-view imaging of 65nm gate length metal-oxide-semiconductor field effect transistors by scanning capacitance microscopy

Y. Naitou, A. Ando, H. Ogiso, S. Kamohara, F. Yano, A. Nishida (1.National Institute of Advanced Industrial Science and Technology (AIST), 2.MIRAI-Selete)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-1-25L] Oxygen-Vacancy-Induced Vt shift in La-containing Devices

B.J. O’Sullivan, R. Mitsuhashi, G. Pourtois, V.S. Chang, C. Adelmann, T. Schram, L.-A. Ragnarsson, N. Van der Heyden, H.-J. Cho, Y. Harada, A. Veloso, R. O’Connor, L. Pantisano, H.Y. Yu, G. Groeseneken, P. Absil, S. Biesemans, A. Ikeda, M. Niwa (1.IMEC, 2.Matsushita Ltd, 3.TSMC, 4.Samsung, 5.Matsushita Electric Industrial Co. Ltd., 6.IMEC)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-1-26L] Physical Understanding of Determinant Factors for Φeff on La-based High-k

Masamichi Suzuki, Tatsuo Schimizu, Masato Koyama (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation)

2007 International Conference on Solid State Devices and Materials |PDF Download

591 results (411 - 420)

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