[E-8-5] Realization of 340nm-band high-power (>7mW) InAlGaN quantum well UV-LED with p-type InAlGaN

Sachie Fujikawa, Takayoshi Takano, Yukihiro Kondo, Hideki Hirayama (1.RIKEN (The institute of Physical and Chemical Research), 2.Matsushita Electric Works, Ltd.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[E-9-1] High-Brightness Ultraviolet LEDs on Si Using Quaternary InAlGaN Multi-Quantum-Wells with High Indium Contents

Yasuyuki Fukushima, Yuji Takase, Manabu Usuda, Kenji Orita, Tetsuzo Ueda, Tsuyoshi Tanaka (1.Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[E-9-2] Effect of Multiquantum Barriers on Carrier Transport Mechanism of InGaN/GaN Multiple Quantum Well Light-emitting Diodes

Wan-Ting Su, Yu-Fang Chen, Hui-Yui Chen, Jen-Cheng Wang, Hui-Tang Shen, Tzer-En Nee, Ya-Fen Wu (1.Department of Electronic Engineering, Chang Gung University, 2.Department of Electrical Engineering, Technology and Science Institute of Northern Taiwan)

2007 International Conference on Solid State Devices and Materials |PDF Download

[E-9-3] MOCVD Growth of GaN-Based LEDs With Naturally Formed Nano-pyramids

C.E. Lee, C.H. Chiu, M.H. Lo, H.W. Huang, T.C. Lu, H.C. Kuo, S.C. Wang (1.Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[E-9-4] A Novel Sn-based Metal Substrate Technology for the Fabrication of Vertical-Structure GaN-Based High Power Light-Emitting Diodes

Hon-Yi Kuo, Shui-Jinn Wang, Kai-Ming Uang, Shiue-Lung Chen, Tron-Min Chen, Pei-Ren Wang, Ching-Chung Tsai, Hon Kuan (1.Institute of Microelectronics, Dept. of Electrical Eng., National Cheng Kung Univ., 2.Dept. of Electrical Eng., Wu Feng Institute of Technology, 3.Optoelectronics Center of Far East Univ.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[E-9-5] The Aluminum Packaging for LED using Selectively Anodizing Method

K.M. Kim, S.H. Shin, Y.K. Lee, S.M. Choi, Y.S. Kwon (1.Department of electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), 2.Samsung Electro-Mechanics)

2007 International Conference on Solid State Devices and Materials |PDF Download

[E-9-6] The Fabrication of the Circular Ring Laser Resonators by Excimer Laser Assisted Etching at Cryogenic Temperature

M.C. Shih, S.C. Wang (1.Department of Electrical Engineering, National University of Kaohsiung)

2007 International Conference on Solid State Devices and Materials |PDF Download

[E-9-7] Red emission from ZnO-based double heterojunction diode

T. Ohashi, K. Yamamoto, A. Nakamura, J. Temmyo (1.Research Institute of Electronics, Shizuoka University, 2.Graduate school of Science and Techology, Shizuoka University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[E-9-8L] A Quantum Dot Swept Laser Source Based Upon a Multi Section Laser Device

B.J. Stevens, D.T.D Childs, K.M. Groom, M. Hopkinson, R.A. Hogg (1.EPSRC National Centre for III-V Technologies, Department of Electronic and Electrical Engineering, University of Sheffiel)

2007 International Conference on Solid State Devices and Materials |PDF Download

[E-9-9L] Optimization of Raman Lasing in Silicon-on-Insulator Optical Waveguides

Hassan Kaatuzian, Mohammadreza Khorasaninejad (1.Photonics Research Laboratory, Electrical Engineering Department, Amirkabir University of Technology)

2007 International Conference on Solid State Devices and Materials |PDF Download