[I-10-2] Single Electron-based Flexible Multi-valued Exclusive-OR Logic Gate

S. J. Kim, C. K. Lee, R. S. Chung, M. S. Kim, E. S. Park, S. J. Shin, J. B. Choi (1.Dept. of Physics & Institute for Nano Science & Technology, Chungbuk National University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[I-10-3] Self-Aligned Dual-Gate Single-Electron Transistors (DG-SETs)

Sangwoo Kang, Dae-Hwan Kim, Il-Han Park, Jin-Ho Kim, Joung-eob Lee, Jong-Duk Lee, Byung-Gook Park (1.Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, 2.School of Electrical Engineering, Kookmin University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[I-10-4] Design Control of Random Dopant-induced Multiple-Tunnel-Junction Arrays for Turnstile Operation

D. Moraru, K. Yokoi, H. Ikeda, M. Tabe (1.Research Institute of Electronics, Shizuoka University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[I-10-5] Acoustic Wave Manipulation by Phased Operation of Two-Dimensionally Arrayed Nanocrystalline Silicon Ultrasonic Emitters

Bernard Gelloz, Masahito Sugawara, Nobuyoshi Koshida (1.Graduate School of Engineering, Tokyo University of Agriculture and Technology)

2007 International Conference on Solid State Devices and Materials |PDF Download

[I-10-6] New Type Oxygen Sensor Using Micro-fabricated Layered Semiconductor Compound

Tri Nugroho, Akihiro Ikeda, Yusuke Kakihara, Hisao Kuriyaki, Yukinori Kuroki (1.Faculty of Information Science and Electrical Engineering, Kyushu University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[I-10-7L] Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs

Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono (1.NTT Basic Research Laboratories, NTT Corportaion)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-1-1] Overview and Future Challenges of Floating Body RAM Technologies

Tomoaki Shino, Takashi Ohsawa, Takeshi Hamamoto, Akihiro Nitayama (1.Center for Semiconductor Research & Development, Toshiba Corporation)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-1-2] URCAT (U-shaped-Recess-Channel-Array Transistor) Technology for 60nm DRAM and beyond

Chihoon Lee, J.C. Park, S. H. Park, S. S. Lee, S. D. Hong, I. G. Kim, Y. J. Choi, T. W. Lee, G. Y. Jin, Kinam Kim (1.DRAM PM Center, DRAM PA Team, 2.CAE, 3.Samsung Electronics Co.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-1-3] RC-FinFET (Recessed Channel FinFET) Cell Transistor Technology for Future Generation DRAMs

Makoto Yoshida, Jae-Rok Kahng, Joon-Seok Moon, Kyoung-Ho Jung, Keunnam Kim, Hyunju Sung, Chul Lee, Chang-Kyu Kim, Wouns Yang, Donggun Park (1.Advanced Technology Development Team 1, 2.Semiconductor R&D Center, 3.Samsung Electronics Co.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-1-4] Investigation on the Body Bias Dependency of Gate Induced Drain Leakage Current in the Body-Tied finFET

Chul Lee, Makoto Yoshida, Kyoung-Ho Jung, Chang Kyu Kim, Hui-Jung Kim, Heungsik Park, Won-Sok Lee, Keunnam Kim, Jaerok Kahng, Wouns Yang, Donggun Park (1.Device Research Team, 2.Process Development Team, 3.CAE Team, Semiconductor R&D Center, 4.Samsung Electronics)

2007 International Conference on Solid State Devices and Materials |PDF Download

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