[G-5-3] Ultra-Short Pulse Generators Using Resonant Tunneling Diodes and Their Integration with Antennas on Ceramic Substrates

Naoki Kamegai, Shigeru Kishimoto, Koichi Maezawa, Takashi Mizutani, Hiroya Andoh, Kazuhiro Akamatsu, Hirofumi Nakata (1.Nagoya University, 2.University of Toyama, 3.Toyota National College of Technology, 4.Nippon Mining & Metals Co., Ltd.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-5-4] High Tuning-Range VCO Using a Gated Tunnel Diode

Mats Arlelid, Mikael Nilsson, Gvidas Astromskas, Erik Lind, Lars-Erik Wernersson (1.Department of Electrical and Information Technology, Lund University, 2.Solid State Physics, Lund University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-6-1] Dynamic response of interface state charges in GaN MIS structures

Kimihito Ooyama, Hiroki Kato, Marcin Miczek, Tamotsu Hashizume (1.Research Center for Integrated Quantum Electronics (RCIQE) and, 2.Graduate School of Information Science and Technology, Hokkaido University, 3.Electronics Division, Sumitomo Metal Mining)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-6-2] Temperature dependence of current-voltage characteristics for AlGaN-based vertical conducting diodes

Atsushi Nishikawa, Kazuhide Kumakura, Toshiki Makimoto (1.NTT Basic Research Laboratories, NTT Corporation)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-6-3] Investigations of Metal/Insulator/AlGaN/GaN Structures by Capacitance-Voltage Measurements and Auger Chemical Profiling

B. Adamowicz, M. Miczek, T. Hashizume, A. Klimasek, P. Bobek, J. Zywicki (1.Department of Applied Physics, Institute of Physics, Silesian University of Technology, 2.Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, 3.High-Tech International Services Inc.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-6-4] Shuttle Activation Annealing of Implanted Al in 4H-SiC

Tomokatsu Watanabe, Ryo Hattori, Masayuki Imaizumi, Tatsuo Oomori (1.Advanced Technology R&D Center, Mitsubishi Electric Corp.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-6-5] Silicon oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method

Kai-Chieh Chuang, Jenn-Gwo Hwu (1.EE-Ⅱ, R446, Department of Electrical Engineering and Graduate Institute of Electronics Engineering National Taiwan University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-7-1] Growth of InAs Channel HEMT Structure on Si substrate and It's Possible Application for Low Power Logic

E. Y. Chang, H. Yamaguchi, Y.C. Lin, M. Ueki, Y. Hirayama, C.Y. Chang (1.Department of Materials Science and Engineering, National Chiao Tung University, 2.NTT Basic Research Laboratories, NTT Corporation, 3.Department of Physics, Tohoku University, 4.NTT Electronics Techno Corporation, 5.SORST-JST)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-7-2] N-channel MOSFETs with In-situ Silane-Passivated Gallium Arsenide Channel and CMOS-Compatible Palladium-Germanium Contacts

Hock-Chun Chin, Ming Zhu, Keat-Mun Hoe, Ganesh S. Samudra, Yee-Chia Yeo (1.Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singapore (NUS), 2.Institute of Microelectronics)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-7-3] Improved electrical characteristics of Pt/Gd2O3/GaAs MOS capacitors with surface preparation procedures

Chao-Ching Cheng, Chao-Hsin Chien, Guang-Li Luo, Chih-Kuo Tseng, Hsin-Che Chiang, Chun-Hui Yang, Chun-Yen Chang (1.Institute of Electronics, National Chiao-Tung University, 2.National Nano Device Laboratory)

2007 International Conference on Solid State Devices and Materials |PDF Download