587件中(321 - 330)

[H-9-1] Correlation Measurement of Time-dependent Potentials in a Semiconductor Point Contact

H. Kamata^1,2、T. Ota¹、T. Fujisawa^1,2 (1.NTT Corp.、2.Tokyo Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-9-2] High Field Electron Transport in the Ballistic T-Branch Junction

H. Irie¹、R. Sobolewski¹ (1.Univ. of Rochester, USA)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-9-3] Fabrication and Characterization of CdF₂/CaF₂ Resonant Tunneling Floating Gate Metal-oxide-semiconductor Field Effect Transistor Structures

M. Watanabe¹、T. Wada¹ (1.Tokyo Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-9-4] An Analysis of THz Oscillator using Negative Differential Resistance Dual Channel Transistor (NDR-DCT) and Integrated Antenna

K. Furuya¹、S. Hori²、T. Sugaya¹、K. Komori¹、M. Mori¹、M. Asada³ (1.AIST、2.Shibaura Inst. of Tech.、3.Tokyo Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-9-5] Theoretical Analysis of Electrorefractive Effect in GaInNAs/GaAs Five Layer Asymmetric Coupled Quantum Well (FACQW) for 1.3 micron Phase Modulator

M. Fukuoka¹、T. Toya¹、Y. Sawai¹、T. Arakawa¹、K. Tada² (1.Yokohama National Univ.、2.Kanazawa Inst. of Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-9-6] Electrical Properties and Photo-responses of SiNWs with Selective Anchored Gold Nanoparticles by using Scanning Probe Bond Breaking Nanolithography

C. H. Wu¹、J. T. Sheu²、T. S. Chao² (1.MingDao Univ.、2.National Chiao Tung Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-9-7] Structure and Conductance of Platinum Wires of Single-Atom Width Studied by In Situ Transmission Electron Microscopy

K. Monna¹、T. Matsuda¹、T. Kizuka¹ (1.Univ. of Tsukuba, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-10-1] Thickness-dependent Resistance Change of Dual-gated Thin Graphite Films

H. Miyazaki^1,5、S. Odaka^1,2、S. Tanaka³、H. Goto^3,5、K. Tsukagoshi^1,4,5、A. Kanda^3,5、Y. Ootuka³、Y. Aoyagi^2,4,5 (1.AIST、2.Tokyo Tech.、3.Univ. of Tsukuba、4.RIKEN、5.CREST-JST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-10-2] Graphene Nanoribbon Transistors and Resonant Tunneling Diodes

G. Liang¹、H. Teong¹、K. Lam¹、N. Neophytou²、D. E. Nikonov³ (1.National Univ. of Singapore, Singapore、2.Purdue Univ.、3.Intel Corp., USA)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-10-3] Sound Emission from Nanocrystalline Silicon Device under Operation of Electroluminescence

B. Gelloz¹、T. Shibata¹、N. Koshida¹ (1.Tokyo Univ. of Agr. and Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

587件中(321 - 330)