[J-8-1] Overview and Future Challenges of Advanced Materials for FeRAM (Invited)

H. Funakubo¹、T. Watanabe¹、N. Menou¹、T. Yamada¹ (1.Tokyo Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-8-2] Hydrogen-and-Stress-Induced de-lamination in an IrO₂ Layer of FRAMs

J. H. Kim¹、D. J. Jung¹、H. H. Kim¹、Y. K. Hong¹、E. S. Lee¹、S. Y. Kim¹、J. Y. Jung¹、H. K. Koh¹、D. Y. Choi¹、S. K. Kang¹、H. Kim¹、W. W. Jung¹、J. Y. Kang¹、Y. M. Kang¹、S. Y. Lee¹、H. S. Jeong¹ (1.Samsung Electronics Co., Ltd., Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-8-3] Current Development Status and Future Challenges of Spin Torque Transfer MRAM Technology (Invited)

K. Ito¹、J. Hayakawa¹、K. Miura^1,2、M. Yamanouchi¹、R. Takemura¹、T. Kawahara¹、S. Ikeda²、H. Hasegawa²、T. Meguro²、R. Sasaki²、H. Takahashi¹、H. Matsuoka¹、H. Ohno² (1.Hitachi, Ltd.、2.Tohoku Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-8-4] Improvement of Switching Disturbance in Spin-Transfer Torque MRAM

D. K. Kim¹、S. C. Oh¹、W. Kim¹、K. T. Nam¹、Y. Kim¹、J. Jeong¹、S. Y. Lee¹、J. E. Lee¹、I. S. Yeo¹、U. I. Chung¹、J. T. Moon¹ (1.Samsung Electronics Co., Ltd., Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-9-1] Interpretation of Resistive Switching in NiO Thin Films (Invited)

I. K. Yoo¹、B. S. Khang¹、M. J. Lee¹、Y. D. Park¹、Y. S. Park¹ (1.Samsung Electronics Co., Ltd., Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-9-2] Resistive Switching Ion-Plug Memory for 32-nm Technology Node and Beyond

K. Ono¹、K. Kurotsuchi¹、Y. Fujisaki¹、R. Takemura¹、M. Terao¹、N. Takaura¹ (1.Hitachi, Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-9-3] RRAM Technology for Fast and Low-Power Forming/Switching

Y. Tamai¹、H. Shima²、H. Muramatsu²、H. Akinaga²、Y. Hosoi¹、S. Ohnishi¹、N. Awaya¹ (1.Sharp Corp.、2.AIST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-9-4] Low-Voltage and Fast-Speed Forming Process of Tungsten Oxide Resistive Memory

K. P. Chang¹、W. C. Chien^1,2、Y. C. Chen¹、E. K. Lai^1,3、S. C. Tsai¹、S. H. Hsieh¹、Y. D. Yao²、J. Gong³、K. Y. Hsieh¹、R. Liu¹、C. Y. Lu¹ (1.Macronix International Co., Ltd.、2.National Chiao Tung Univ.、3.National Tsing Hua Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-9-5] Multi-Level Switching Characteristics for WO_X Resistive RAM (RRAM)

W. C. Chien^1,2、K. P. Chang¹、Y. C. Chen¹、E. K. Lai^1,3、H. Mähne¹、Y. D. Yao^2,4、P. Lin²、J. Gong³、S. H. Hsieh¹、K. Y. Hsieh¹、R. Liu¹、C. Y. Lu¹ (1.Macronix International Co., Ltd.、2.National Chiao Tung Univ.、3.National Tsing Hua Univ.、4.Tatung Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-9-6] The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO₂/Pt Memory Device

B. Sun¹、L. F. Liu¹、N. Xu¹、B. Gao¹、Y. Wang¹、D. D. Han¹、X. Y. Liu¹、R. Q. Han¹、J. F. Kang¹ (1.Peking Univ., China)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

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