[P-3-16] Optimization of Source/Drain Overlap to Gate for 16 nm Gate Last MOSFETs

J. Jang¹、T. Lim¹、H. Kim¹、Y. Kim¹ (1.Hongik Univ., Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-17] Effect of Nickel Silicide Intrusion on Schottky Barrier Nanowire MOSFET Fabricated using Top-down Technology

Y. K. Chin^1,2,3、K. L. Pey¹、N. Singh²、G. Q. Lo²、L. Chan³、L. H. Tan²、E. J. Tan^1,2 (1.Nanyang Technological Univ.、2.Inst. of Microelectronics、3.Chartered Semiconductor Manufacturing Ltd., Singapore)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-18] Electrical and Structural Evaluations of Ultrathin SiGe- and Ge-on-insulator Fabricated using Ge Condensation by Dry Oxidation

H. Yang¹、D. Wang¹、H. Gao¹、K. Hirayama¹、K. Ikeda¹、S. Hata¹、H. Nakashima¹ (1.Kyushu Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-19] Triple-gate FinFETs with Fin-thickness Optimization to Reduce the Impact of Fin Line Edge Roughness

S. Yu¹、Y. Zhao¹、G. Du¹、J. Kang¹、R. Han¹、X. Liu¹ (1.Peking Univ., China)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-20] Analysis of Fowler-Nordheim Stress Induced Trap Generation on Random Telegraph Signal Noise

Y. Son¹、H. Shin¹ (1.Seoul National Univ., Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-21] Effect of Hot-Carrier-Induced Hole Trapping on n-Type LDMOS Transistors

K. S. Tian¹、J. F. Chen¹、S. Y. Chen¹、J. R. Lee¹、K. M. Wu²、C. M. Liu² (1.National Cheng Kung Univ.、2.Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-22] Impact of Tungsten Capping Layer on Yttrium Silicide for Low Resistance Source/Drain Contacts

T. Isogai¹、H. Tanaka¹、T. Goto¹、A. Teramoto¹、S. Sugawa¹、T. Ohmi¹ (1.Tohoku Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-23] Multiple-gated Poly-Si Nanowire Thin-Film Transistors

T. W. Liu¹、H. H. Hsu¹、Z. M. Lin¹、C. D. Lin²、T. Y. Huang¹、H. C. Lin^1,2 (1.National Chiao Tung Univ.、2.National Nano Device Labs., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-24] Subthreshold Current Model of Cylindrical Gate-All-Around Nanowire MOSFETs using Analytical Solutions of Poisson's Equation

Y. S. Wu¹、P. Su¹ (1.National Chiao Tung Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-25] Low-frequency Noise Characteristics of SiGe-channel PMOSFETs with High-compressive ILD-SiN_x Stressing Layer

Y. T. Chen¹、K. M. Chen²、W. S. Liao³、G. W. Huang²、F. S. Yeh¹ (1.National Tsing Hua Univ.、2.National Nano Device Labs.、3.UMC, Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

587件中(461 - 470)

« 前へ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
次へ »

▲