[G-7-2] 4H-SiC Power MOSFETs and SBDs of 1.7kV Rating

N. Miura¹、S. Yoshida¹、Y. Nakao¹、Y. Matsuno¹、K. Kuroda¹、M. Imaizumi¹、H. Sumitani¹、H. Yamamoto¹、T. Oomori¹ (1.Mitsubishi Electric Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-7-3] Improvements in Thermal Stability of Hydrogen-terminated Diamond FETs

M. Kubovic¹、Y. Yamauchi¹、M. Kasu¹ (1.NTT Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-7-4] Diamond High Power Devices

H. Umezawa¹、R. Kumaresan¹、K. Ikeda¹、N. Tatsumi²、S. Shikata¹ (1.AIST、2.Sumitomo Electric Industries, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-7-5L] Mechanism of Normally-Off Operation in GaN-Based Transistors by Interstitial Fluorine Incorporation

T. Takizawa¹、T. Ueda¹ (1.Matsushita Electric Industrial Co., Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-7-6L] Electrical Properties of 4H-SiC CMOS with Wet Processed Gate Oxide

M. Okamoto¹、T. Yatsuo¹、K. Fukuda¹、H. Okumura¹ (1.AIST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-8-1] Threshold Voltage Shift in Ga₂O₃-In₂O₃-ZnO (GIZO) Thin Film Transistors under Constant Voltage Stress

M. Fujii¹、H. Yano¹、T. Hatayama¹、Y. Uraoka¹、T. Fuyuki¹、J. S. Jung²、J. Y. Kwon²、T. Nakanishi³、M. Kimura³ (1.NAIST, Japan、2.Sumsung Advanced Inst. of Tech., Korea、3.Ryukoku Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-8-2] Transparent Oxide Semiconductor-Based Self-Alignment Thin-Film Transistor

Y. Hirouchi¹、A. Yamagishi¹、S. Naka¹、H. Okada¹ (1.Univ. of Toyama, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-8-3] Ring Oscillator Circuit based on ZnO Thin Film Transistors

W. C. Shin¹、K. Remashan¹、M. S. Oh¹、S. J. Park¹、J. H. Jang¹ (1.Gwangju Inst. of Sci. and Tech., Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-8-4] Mo-doped ZnO Electrode for IGZO Transparent Thin-film Transistor - Its Hard-saturation Behavior

W. S. Cheong¹、J. H. Shin¹、C. W. Byun¹、M. Ryu¹、C. S. Hwang¹ (1.ETRI, Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-8-5L] Characteristics of an Enzyme-based ZnO/Zn_0.7Mg_0.3O Heterojunction Field-Effect Transistor as a Glucose Sensor

K. Koike¹、D. Takagi¹、M. Hashimoto¹、T. Hashimoto¹、T. Inoue¹、K. Ogata¹、S. Sasa¹、M. Inoue¹、M. Yano¹ (1.Osaka Inst. of Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

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