[H-8-4L] High Density and Power Efficient SiP with SCS Technology

E. Hosomi¹, Y. Matsubara¹, Y. Fujimoto¹, M. Oida², H. Ezawa¹, M. Fukuda¹, K. Numata¹, K. Miyamoto¹ (1.Toshiba Corp., 2.J-Devices Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-9-1] Characterization of LTO coating on microlens of CMOS image sensor

J. Gambino¹, B. Leidy¹, C. Musante¹, K. Ackerson¹, B. Guthrie¹, J. Twombly¹, E. Cooney¹, P. Pokrinchak¹, D. Meatyard¹, J. Adkisson¹, R. Rassel¹, M. Jaffe¹ (1.IBM , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-9-2] Near-Infrared Image Sensor Fabricated Using Compliant Bump

N. Watanabe^1,3, F. Hoashi¹, Y. Nagai², H. Inada², Y. Iguchi², T. Asano¹ (1.Kyushu Univ., 2.Sumitomo Electric Industries, Ltd., 3.Fukuoka Industry Sci, and Tech. Foundation , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[H-9-3L] MEMS Resonance Test for Mechanical Characterization of Nano-Scale Thin Films

H. Yamagiwa¹, D. Goto¹, T. Namazu¹, T. Takeuchi², K. Murakami², Y. Kawashimo², T. Takano³, K. Yoshiki¹, S. Inoue¹ (1.Univ. of Hyogo, 2.Shinko Seiki Co. Ltd., 3.The New Industry Research Organization , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-1-1] Adding Value to CMOS through Heterogeneous Integration

Y. Royter¹, P. R. Patterson¹, J. C. Li¹, K. R. Elliot¹, T. Hussain¹, M. F. Boag-O'Bryen¹, J. R. Duvall¹, M. C. Montes¹, D. A. Hitko¹, M. Sokolich¹, D. H. Chow¹, P. D. Brewer¹ (1.HRL Laboratories, LLC , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-1-2] InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer

T. Kanazawa¹, R. Terao¹, Y. Yamaguchi¹, S. Ikeda¹, Y. Yonai¹, Y. Miyamoto¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-1-3] Source/Drain Engineering for In_0.7Ga_0.3As N-MOSFETs: Raised Source/Drain with In Situ Doping for Series Resistance Reduction

X. Gong¹, H. C. Chin¹, S. M. Koh¹, L. Wang¹, Ivana¹, Z. Zhu¹, B. Wang², C. K. Chia², Y. C. Yeo¹ (1.National Univ. of Singapore, 2.Inst. of Materials Res. and Engineering, Agency for Sci. Tech. and Res. , Singapore)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-1-4] A sub 350°C GaSb pMOSFET with ALD high-k dielectric

A. Nainani¹, T. Irisawa¹, Y. Sun¹, F. Crnogorac¹, K. Saraswat¹ (1.Stanford Univ. , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-2-1] Integration Technologies for GaN Power Transistors

T. Ueda¹, T. Tanaka¹, D. Ueda¹ (1.Panasonic Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[I-2-2] High-Gain and High-Bandwidth AlGaN/GaN HEMT Comparator

A. M. H. Kwan¹, K. Y. Wong¹, X. Liu¹, K. J. Chen¹ (1.Hong Kong Univ. of Sci. and Tech. , Hong Kong)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (301 - 310)

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