[I-2-3] Suppression of gate leakage and enhancement of breakdown voltage using Al2O3 nano particles as gate dielectric for AlGaN/GaN MOS-HEMTs
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download
2010 International Conference on Solid State Devices and Materials |PDF Download