[A-1-1] Electronic Structures and Electric Properties of Rubrene Single Crystal Studied By Photoemission, Time-of-Flight, and Displacement Current Measurements

H. Ishii¹ (1.Chiba Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[A-1-2] Carrier Propagation Dependence on Applied Potentials in Pentacene OFET Investigated by Impedance Spectroscopy and Electrical Time-of-Flight Techniques

J. Lin¹, M. Weis², D. Taguchi¹, T. Manaka¹, M. Iwamoto¹ (1.Tokyo Tech , Japan, 2.Slovak Aca. Sci , Slovakia)

2010 International Conference on Solid State Devices and Materials |PDF Download

[A-1-3] Transient Absorption Decay Characteristics at Visible Wavelength Region for NMe₂-Silole:Fluorene Blend Film

T. Fukuda¹, A. Furube², R. Kobayashi¹, N. Kamata¹, K. Hatano¹ (1.Saitama Univ., 2.AIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[A-1-4] Computational Analysis of Electron Injection on Light-Emitting Polymer/Cathode Interface

I. Yamashita¹, H. Onuma¹, R. Nagumo¹, R. Miura¹, A. Suzuki¹, H. Tsuboi¹, N. Hatakeyama¹, A. Endou¹, H. Takaba¹, M. Kubo¹, A. Miyamoto¹ (1.Tohoku Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[A-2-1] Non-Contact Measurement of Charge Carrier Mobility in Inorganic and Organic Semiconductor Materials

S. Seki^1,2, A. Asano¹, Y. Honsho¹, A. Saeki^1,2 (1.Osaka Univ., 2.PRESTO, JST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[A-2-2] Probing of Transient Electric Field Distribution in ITO/PI/P3HT/Au Using Time-Resolved Second Harmonic Generation Measurement

R. Miyazawa¹, D. Taguchi¹, T. Manaka¹, M. Iwamoto¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[A-2-3] Grain boundary effect on charge transport in pentacene thin films

M. Weis¹, K. Gmucova¹, V. Nadazdy¹, D. Hasko², D. Taguchi³, T. Manaka³, M. Iwamoto³ (1.Slovak Academy of Sciences, 2.International Laser Centre , Slovakia, 3.Tokyo Tech. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[A-3-1] Improved the power efficiency of white phosphorescent organic light-emitting diode with thin double emitting-layers and hole-trapping mechanism

F. S. Juang¹, S. H. Wang¹, Y. S. Tsai¹, M. H. Gao¹, Y. Chi², H. P. Shieh³ (1.National Formosa Univ., 2.National Tsing Hua Univ., 3.National Chiao Tung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[A-3-2] Current Density Dependence of Transient Properties in Green Phosphorescent Organic Light-Emitting Diodes

H. Kajii¹, N. Takahota¹, Y. Wang¹, Y. Ohmori¹ (1.Osaka Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[A-3-3] High efficiency phosphorescent organic light-emitting diode by incorporating an electron transport material into emitting layer

F. S. Juang¹, S. H. Wang¹, Y. S. Tsai¹, B. S. Hsieh¹, Y. Chi², H. P. Shieh³ (1.National Formosa Univ., 2.National Tsing Hua Univ., 3.National Chiao Tung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download