[B-9-1] Measurements of Electrostatic Potential Across p-n Junctions on Oxidized Si Surfaces by Scanning Multi-Mode Tunneling Spectroscopy

L. Bolotov¹, T. Tada¹, M. Iitake¹, M. Nishizawa¹, T. Kanayama¹ (1.AIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-9-2] Interfacial atomic structure between Pt-added NiSi and Si (001)

N. Ikarashi¹, M. Narihiro¹, T. Hase¹ (1.Renesas Electronics Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-9-3] TO- and LO-mode analyses in asymmetric stretching vibrations in ultra thin thermally grown GeO₂ on Ge substrate

M. Yoshida¹, T. Nishimura^1,2, C. H. Lee¹, K. Kita^1,2, K. Nagashio^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-9-4] Quantitative Analysis of Stress Relaxation in TEM specimen fabrication by Raman Spectroscopy with High-NA Oil-Immersion Lens

D. Kosemura^1,2, A. Ogura¹ (1.Meiji Univ., 2.JSPS , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[B-9-5] Uniaxial and Biaxial Strain Distribution Mapping in SOI Micro-Structures by Polarized Raman Spectroscopy

M. Kurosawa^1,2, T. Sadoh¹, M. Miyao¹ (1.Kyushu Univ., 2.JSPS , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-1-1] Contributions of Interface-Trap and Minority-Carrier Responses to C-V characteristics of Al₂O₃/InGaAs Capacitors

Y. Urabe¹, N. Miyata¹, T. Yasuda¹, H. Yamada², M. Hata², N. Taoka³, T. Hoshii³, M. Takenaka³, S. Takagi³ (1.AIST, 2.Sumitomo Chemical Co., Ltd., 3.Univ. of Tokyo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-1-2] New Insights into Flicker Noise Improvement Mechanism Using Random Telegraph Signal Technique

T. L. Li¹, S. Y. Huang¹, B. Hung¹, C. Y. Tzeng¹, S. Chou¹ (1.United Microelectronics Corp. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-1-3] Drastic reduction of the low frequency noise in Si(100) p-MOSFETs

P. Gaubert¹, A. Teramoto¹, R. Kuroda¹, Y. Nakao¹, H. Tanaka¹, T. Ohmi¹ (1.Tohoku Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-1-4] Layout Dependent STI Stress Effect on High Frequency Performance and Flicker Noise in Nanoscale CMOS Devices

K. L. Yeh¹, C. Y. Ku¹, J. C. Guo¹ (1.National Chiao Tung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-2-1] Abrupt Source Heterostructures with Lateral-Relaxed/Strained Layers for Quasi-Ballistic CMOS Transistors using Lateral Strain Control Technique of Strained Substrates

T. Mizuno^1,2, M. Hasegawa¹, K. Ikeda³, M. Nojiri⁴, T. Horikawa² (1.Kanagawa Univ., 2.MIRAI-NIRC, 3.MIRAI-Toshiba, 4.AIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (71 - 80)

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