[J-6-3] Body-biased steep-subthreshold-swing MOS (BS-MOS) with small hysteresis, off current, and drain voltage

K. Nishiguchi¹, A. Fujiwara¹ (1.NTT Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[J-6-4] Impacts of Diameter-Dependent Annealing in Silicon Nanowire MOSFETs

R. Wang¹, T. Yu¹, W. Ding¹, R. Hung¹ (1.Peking Univ. , China)

2010 International Conference on Solid State Devices and Materials |PDF Download

[J-6-5] Single-electron transport through a Germanium-Nanowire Quantum Dot

S. K. Shin^1,2, S. Huang¹, N. Fukata³, K. Ishibashi^1,2 (1.RIKEN, 2.Tokyo Inst. of Tech., 3.National Inst. for Materials Sci. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[J-6-6] A Theoretical Study of Electron Wave Function Penetration Effects on Electron-Modulated-Acoustic-Phonon Interactions in Silicon Nanowire MOSFETs

J. Hattori^1,3, S. Uno^1,3, N. Mori^2,3, K. Nakazato¹ (1.Nagoya Univ., 2.Osaka Univ., 3.CREST-JST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[J-7-1] Al-doped Zinc Oxide Field Emitter Array Controlled by High-Voltage Poly-Si Thin Film Transistor

P. Y. Yang¹, J. L. Wang², W. C. Tsai³, S. J. Wang³, J. C. Lin⁴, I. C. Lee¹, C. T. Chang¹, H. C. Cheng¹ (1.National Chiao Tung Univ., 2.Ming Chi Univ. of Technology, 3.National Cheng Kung Univ., 4.St. John's Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[J-7-2] Nanoarchitecture Light Emitting Diode Microarrays Using Position-Controlled GaN/ZnO Coaxial Nanotube Heterostructures

C. H. Lee^1,2, J. Yoo^1,2, Y. J. Hong^1,2, J. Cho¹, Y. J. Kim^1,2, S. R. Jeon³, J. H. Baek³, G. C. Yi¹ (1.Seoul National Univ., 2.POSTECH, 3.Korea Photonics Tech. Inst. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

[J-7-3] Electrical Characterization of InGaAs nanowire MISFETs Fabricated by Dielectric-first Process

Y. Kohashi¹, T. Sato¹, K. Tomioka^1,2, S. Hara¹, T. Fukui¹, J. Motohisa¹ (1.Hokkaido Univ., 2.JST-PRESTO , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[J-7-4] Lateral GaAs nanowires with triangular and trapezoidal cross-sections grown on (311)B and (001) substrates

G. Zhang¹, K. Tateno¹, H. Gotoh¹, T. Sogawa¹ (1.NTT Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[J-7-5] C-V Characteristics and Analysis of Undoped Gate-All-Around Nanowire FET Array

R. H. Baek¹, C. K. Baek², S. H. Lee¹, S. D. Suk³, M. Li³, Y. Y. Yeoh³, K. H. Yeo³, D. W. Kim³, J. S. Lee^1,4, D. M. Kim², Y. H. Jeong^1,4 (1.POSTECH, 2.Korea Institute for Advanced Study (KIAS), 3.Samsung Electronics Company, 4.National Center for Nanomaterials and Technology (NCNT) , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-1-1] Multi-fingered LDMOS thermal analysis based on a distributed thermal network

S. Hniki^1,2,3, G. Bertr¹, A. Canepari¹, M. Minondo¹, H. Jaouen¹, F. Morancho^2,3 (1.STMicroelectronics, 2.CNRS-LAAS, 3.Université de Toulouse , France)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (371 - 380)

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