[P-13-10] Ellipsoidal Band Structure Effects on Maximum Ballistic Current in Silicon Nanowires

N. Mori^1,3, H. Minari^1,3, S. Uno^2,3, J. Hattori^2,3 (1.Osaka Univ., 2.Nagoya Univ., 3.CREST-JST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-13-12] Co-existence of Random Telegraph Noise and Single-Hole-Tunneling State in Gate- All-Around PMOS Silicon Nanowire Field-Effect-Transistors

B. H. Hong¹, S. J. Lee¹, S. W. Hwang¹, Y. Y. Lee², D. Ahn², K. H. Cho³, K. H. Yeo³, D. W. Kim³, G. Y. Jin³, D. Park³ (1.Korea Univ., 2.Univ. of Seoul, 3.Samsung Electronics Co., Ltd. , Korea)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-13-13] Performance Comparisons of Schottky Barrier Transistors Using Si-, Ge- and Ge-Si Core-Shell Nanowires as Channels

J. Pu¹, L. Sun¹, R. Han¹ (1.Peking Univ. , China)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-13-14] Monoclinic-Ga₂O₃ nanowire-based solar-blind photodetectors

W. Y. Weng¹, S. J. Chang¹, G. J. Huang¹, S. P. Chang¹ (1.National Cheng Kung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-13-15] Enhanced Efficiency of ZnO Nanowires Based Dye-Sensitized Solar Cells with Hetrosensitizer

P. H. Wang¹, S. J. Wang¹, K. M. Uang², T. M. Chen², P. R. Wang¹, T. C. Wang¹, R. M. Ko¹ (1.National Cheng Kung Univ., 2.Wufeng Inst. of Tech. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-13-16] Tip engineering of hydrothermally grown ZnO nanorods and its application in low-voltage operable field emitters

C. Y. Kuo¹, S. J. Wang¹, W. I. Hsu¹, F. S. Tsai¹, R. M. Ko¹, W. C. Hsu¹ (1.National Cheng Kung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-13-17] Synthesis of Co-Doped Fullerene Nanowhiskers and Cobalt-Encapsulated Carbon Nanocapsules

D. Matsuura¹, K. Miyazawa², T. Kizuka¹ (1.Univ. of Tsukuba, 2.National Institute for Material Science , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-14-1] Lateral High-Voltage 4H-SiC MOSFETs

W. S. Lee¹, C. W. Lin¹, M. S. Yang¹, C. F. Huang¹, J. Gong², Z. Feng³ (1.National Tsing Hua Univ., 2.TongHai Univ. , Taiwan, 3.University of South Carolina , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-14-2] First Principles Calculations on CSL Grain Boundary Impurities in Multicrystalline Silicon

A. Suvitha¹, N. S. Venkataramanan¹, R. Sahara¹, H. Mizuseki¹, Y. Kawazoe¹ (1.Tohoku Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[P-14-3] Omnidirectional antireflective Indium-Tin-Oxide Nanorods on trapezoid-cone nanostructures for crystalline silicon photovoltaics

H. C. Chen¹, P. C. Tseng¹, M. A. Tsai¹, H. C. Kuo¹ (1.National Chiao Tung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

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