[K-1-2] Modeling of RESURF LDMOS for Accurate Prediction of Junction Condition on Device Characteristics

T. Saito^1,2, T. Tanaka¹, T. Hayashi¹, K. Kikuchihara¹, T. Kanamoto², H. Masuda², M. Miyake¹, S. Amakawa¹, H. J. Mattausch¹, M. Miura-Mattausch¹ (1.Hiroshima Univ., 2.Renesas Electronics Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-2-1] High Performance Silicon Carbide Power Modules for Extreme Environment Applications

A. B. Lostetter¹, J. Hornberger¹, B. McPherson¹, R. Shaw¹, B. Reese¹, M. Schupbach¹ (1.Arkansas Power Electronics International, Inc. , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-2-2] Review of Power Converter Temperature and Loss Simulation using Compact Device Models

P. A. Mawby¹, A. T. Bryant¹ (1.Univ. of Warwick , UK)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-3-1] Recent Progress in High Voltage MOS-gated Power Transistors in GaN

T. P. Chow¹ (1.Rensselaer Polytechnic Institute , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-3-2] Progress in SiC Power Semiconductor Devices

T. Shinohe¹ (1.Toshiba Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-3-3] Effects of surface and crystalline defects on reverse characteristics of 4H-SiC JBS diodes

T. Katsuno¹, Y. Watanabe¹, H. Fujiwara², M. Konishi², T. Yamamoto³, T. Endo³ (1.Toyota Central R&D Labs., Inc., 2.Toyota Motor Corp., 3.DENSO Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-3-4] High hole current achievement of hydrogen-terminated diamond MOSFETs coated with Poly-tetra-fluoro-ethylene

S. Sato¹, K. Tsuge¹, T. Tsuno¹, T. Ono¹, H. Kawarada¹ (1.Waseda Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-4-1] Optical and Photoelectrical Characterizations of Wide-gap Nanocrystalline Silicon Layers

R. Mentek¹, B. Gelloz¹, M. Kawabata¹, N. Koshida¹ (1.Tokyo Univ. of Agri. And Tech. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-4-2] Carrier Transfer Simulation on Si/SiC interface in Quantum Dot Solar Cells

S. Hirose¹, I. Yamashita¹, R. Nagumo¹, R. Miura¹, A. Suzuki¹, H. Tsuboi¹, N. Hatakeyama¹, A. Endou¹, H. Takaba¹, M. Kubo¹, A. Miyamoto¹ (1.Tohoku Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-4-3] Development of Multi-Scale Simulation Method for Dye-Sensitized Solar Cells Including Effect of Photoelectrode Material Interface

M. Onodera¹, R. Nagumo¹, R. Miura¹, A. Suzuki¹, H. Tsuboi¹, N. Hatakeyama¹, A. Endou¹, H. Takaba¹, M. Kubo¹, A. Miyamoto¹ (1.Tohoku Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (381 - 390)

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