[K-4-4L] Crystalline Silicon Solar Cells Used with Al and Au Metals

T. Sameshima¹, K. Kogure¹, M. Hasumi¹ (1.Tokyo Univ. of Agri. And Tech. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-4-5L] Enhancement of the efficiency of GaAs-based solar cells by sol-gel-synthesized ZnO nanowire arrays as the antireflection layer

Y. K. Su¹, C. Y. Cheng¹, J. Y. Huang¹, Y. W. Lee¹ (1.National Cheng Kung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-5-1] Flexible Cu(In,Ga)Se₂ Thin Film Solar Cells and Challenges for Low Temperature Growth

C. A. Kaufmann¹, R. Caballero¹, T. Rissom¹, T. Eisenbarth¹, T. Unold¹, R. Klenk¹, H. W. Schock¹ (1.Helmholtz Zentrum Berlin für Materialien und Energie , Germany)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-5-2] First principles calculations of defect formation in In-free photovoltaic semiconductors Cu₂ZnSnS₄ and Cu₂ZnSnSe₄

T. Maeda¹, S. Nakamura¹, T. Wada¹ (1.Ryukoku Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-5-3] Kinetics of strain relaxation in lattice-mismatched In_xGa_1-xAs/GaAs heteroepitaxy

T. Sasaki¹, H. Suzuki², M. Takahasi³, S. Fujikawa³, I. Kamiya¹, Y. Ohshita¹, M. Yamaguchi¹ (1.Toyota Tech. Inst., 2.Univ. of Miyazaki, 3.JAEA , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-5-4] Numerical Analysis of a Solar Cell with a Tensile-Strained Ge as a Novel Narrow Band Gap Absorber

Y. Hoshina¹, M. Shimizu¹, A. Yamada¹, M. Konagai¹ (1.Tokyo Tech , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-6-1] Quantum Dot Superlattice for High Efficiency Intermediate Band Solar Cell

Y. Okada¹ (1.Univ. of Tokyo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-6-2] Energy transfer in multi-stacked InAs quantum dots

K. Akahane¹, N. Yamamoto¹, M. Naruse^1,2, T. Kawazoe², T. Yatsui², M. Ohtsu² (1.Natl. Inst. of Info. and Com. Tech., 2.Univ. of Tokyo , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-6-3] Enhanced Photoluminescence Properties from Self-Assembled InAs Surface Quantum Dots by Antimony Incorporation

C. H. Chiang¹, Y. H. Wu¹, M. C. Hsieh¹, C. H. Yang¹, J. F. Wang¹, Y. C. Chang¹, L. Chang¹, J. F. Chen¹ (1.National Chiao Tung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[K-6-4] Structure changes caused by quenching of InAs/GaAs(001) quantum dots

M. Takahasi¹ (1.JAEA , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

655 results (391 - 400)

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