SiGe channel pMOSFETs: Comparative Study to Si channel

K. Nakatsuka¹, H. Okamoto¹, H. Itokawa¹, K. Okano¹, T. Izumida¹, M. Kondo¹, T. Morooka¹, I. Mizushima¹, A. Azuma¹, N. Aoki¹, S. Inaba¹, Y. Toyoshima¹ (1.Toshiba Corp. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-2-3] Experimental Investigation and Modeling for Surface Roughness Limited Mobility in Strained pMOSFETs

W. P. N. Chen¹, J. J. Y. Kuo¹, B. K. Y. Lu¹, P. Su¹ (1.National Chiao Tung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-2-4] Impact of the Channel Direction Dependent Low Field Hole Mobility on Si(100)

R. Kuroda¹, A. Teramoto¹, S. Sugawa¹, T. Ohmi¹ (1.Tohoku Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-3-1] Tunnel FET Promise and Challenges

T. -J. King Liu¹, S. H. Kim¹ (1.Univ. of California Berkeley , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-3-2] Optimization of Silicon ρ-channel Tunnel FET with Dual κ Spacer

H. Virani¹, S. Gundapaneni¹, A. Kottantharayil¹ (1.Indian Inst. of Tech. , India)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-3-3] Drive Current Improvement in Si Tunnel Field Effect Transistors by means of Silicide Engineering

D. Leonelli^1,2, A. Vandooren¹, R. Rooyackers¹, A. S. Verhulst¹, S. De Gendt^1,2, M. M. Heyns^1,2, G. Groeseneken^1,2 (1.IMEC, 2.Katholieke Univ. Leuven , Belgium)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-3-4] Metal Schottky S/D Technology of Ultra Thin SOTB (Silicon on Thin Box) MOSFET

A. Shima¹, N. Sugii¹, N. Mise¹, D. Hisamoto¹, K. Takeda¹, K. Torii¹ (1.Hitachi, Ltd. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-4-1] Effective Suppression of Random-Dopant-Induced Characteristic Fluctuation Using Dual Material Gate Technique for 16 nm MOSFET Devices

K. F. Lee¹, Y. Li¹, C. Y. Yiu¹, T. T. Khaing¹ (1.National Chiao Tung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-4-2] High Temperature Characteristic of Radom Variability of Drain Current in Scaled FETs

T. Tsunomura¹, A. Kumar², T. Mizutani², A. Nishida¹, K. Takeuchi¹, S. Inaba¹, S. Kamohara¹, K. Terada³, T. Hiramoto^1,2, T. Mogami¹ (1.MIRAI-Selete, 2.Univ. of Tokyo, 3.Hiroshima City Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF Download

[C-4-3] Device Engineering to Improve SRAM Static Noise Margin

J. Luo¹, L. Wei¹, F. Boeuf², D. Antoniadis³, T. Skotnicki², H. S. P. Wong¹ (1.Stanford Univ. , USA, 2.STMicroelectronics , France, 3.MIT , USA)

2010 International Conference on Solid State Devices and Materials |PDF Download

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