[PS-14-9] LACBED Analysis of Threading Dislocation with c+a Burgers Vector in 4H-SiC

Y. Sugawara¹、M. Nakamori¹、Y. Yao¹、Y. Ishikawa¹、K. Danno²、H. Suzuki²、T. Bessho²、S. Yamaguchi³、K. Nishikawa³、Y. Ikuhara^1,4 (1.Japan Fine Ceramics Center、2.Toyota Motor Corp.、3.Toyota Central Res. and Development Labs. Inc.、4.The Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-10] 3kV-class DIMOSFET on 4H-SiC (000-1)

H. Kono^1,2、M. Furukawa^1,2、K. Ariyoshi^1,2、T. Suzuki^1,2、Y. Tanaka^1,3、T. Shinohe^1,2 (1.R&D Partnership for Future Power Electronics Tech.、2.Corporate R&D Center, Toshiba Corp、3.National Inst. of Advanced Industrial Science and Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-11] Carrier Transport Property of Heavily-Boron-Doped Degenerate Diamond Single-crystalline Thin Layers Etched with Hydrogen Plasma

T. Kuki¹、O. Maida¹、T. Ito¹ (1.Univ. of Osaka , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-12] First Principles Study of N Incorporation Effect during SiC Oxidation

S. Kato¹、K. Chokawa¹、K. Kamiya¹、K. Shiraishi¹ (1.Univ. of Tsukuba , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-13] Modeling of the Impurity-Gradient Effect in High-Voltage Laterally-Diffused MOSFETs

T. Iizuka¹、K. Fukushima¹、A. Tanaka¹、T. Sakuda¹、H. Kikuchihara¹、M. Miyake¹、H. J. Mattausch¹、M. Miura Mattausch¹ (1.Hiroshima Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-14-14L] Stability in Multi-parallel Operation of 3.3kV SiC-SBDs

A. Koyama^1,2、H. Watanabe^1,2、S. Nakata^1,2、Y. Nakaki^1,2、Y. Fujii^1,2、K. Otsuka²、T. Kawakami²、M. Imaizumi²、Y. Toyoda^1,2、H. Sumitani²、T. Miki^1,2、Y. Nakayama²、T. Oomori^1,2 (1.FUPET、2.Mitsubishi Electric Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-15-1] Optimal Si-SiGe hetero-structure thin-film solar cell with theoretical calculation and quantitative analysis

M. H. Liao¹、C. H. Chen¹、L. C. Chang¹、C. Yang¹、S. C. Kao¹、C. F. Hsieh² (1.National Taiwan Univ.、2.Industrial Tech. Research Inst. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-15-2] FT-IR and TPD Analysis of Ozone-Based Atomic Layer Deposited AlOx Passivation Films for Crystalline Silicon Solar Cells

K. Arafune^1,4、S. Yamamoto^1,4、K. Urushibata^1,4、S. Miki^1,4、H. Yoshida^1,4、A. Ogura^2,4、Y. Ohshita^3,4、S. Satoh^1,4 (1.Univ. of Hyogo、2.Meiji Univ.、3.Toyota Tech. Inst.、4.JST-CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-15-3] Fabrication of Cu2ZnSnSe4 film solar cell by sputtering-selenization

S. Y. Kuo¹、J. F. Yang^1,2、F. I. Lai²、C. J. Lin³ (1.Univ. of Chang Gung、2.Univ. of Yuan-Ze、3.Corp. of Solar Applied Materials Tech. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-15-4] The Effects of Various Curvatures on Stainless-Steel Substrate using Back Cor-rect Layer and on the CIS Film after RTP Selenization Process

R. F. Shih¹、W. T. Li²、W. S. Peng³、T. T. Li¹、S. H. Chen²、C. C. Kuo⁴、S. C. Hu⁵、Y. T. Lu⁵、S. N. Hsu⁵、H. C. Cheng⁵ (1.National Central Univ. of Taoyuan County、2.National Central Univ. of Taoyuan County、3.National Central Univ. of Taoyuan County、4.National Central Univ. of Taoyuan County、5.Chung-Shan Inst. of Sci. & Tech. of Taoyuan County , Taiwan, (R.O.C.))

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード