[PS-1-12] Novel Sn-assisted Nitridation of Ge/HfO₂ Interface and Improved Electrical Properties of This MOS Capacitor

M. Zhao¹、R.R. Liang¹、J. Wang¹、J. Xu¹ (1.Tsinghua Univ. (China))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-13] Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode

A. Suzuki¹、S. Asaba¹、J. Yokoi¹、O. Nakatsuka¹、M. Kurosawa^1,2、K. Kato¹、M. Sakashita¹、N. Taoka¹、S. Zaima¹ (1.Nagoya Univ.、2.JSPS (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-14L] Residual Defects in Low-dose Arsenic Implanted Si after High-temperature Rapid Thermal Annealing: Their Behavior and Influence on CCD Image Sensors

A. Sagara¹、A. Uedono²、N. Oshima³、R. Suzuki³、S. Shibata¹ (1.Panasonic Corp.、2.Univ. of Tsukuba、3.National Inst. of Advanced Indus. Sci. and Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-2-3] Room Temperature Bonding of Heterogeneous Materials for Near-Infrared Image Sensor

T. Shuto¹、K. Iwanabe¹、M. Ogura²、K. Nishida²、T. Asano¹ (1.Kyushu Univ.、2.IRspec Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-2-4] Young Modulus of Si in 3D-LSIs and Reliability

M. Murugesan¹、J.C. Bea¹、T. Fukushima¹、K.W. Lee¹、T. Tanaka¹、M. Koyanagi¹ (1.Tohoku Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-2-5] Self-Assembly and Electrostatic(SAE)Carrier Technology for Via-Last Backside-Via Multichip-to-Wafer 3D Integration

H. Hashiguchi¹、T. Fukushima¹、J.C. Bea¹、K.W. Lee¹、T. Tanaka¹、M. Koyanagi¹ (1.Tohoku Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-2-6] Luminescence from SiO2 by Helium Ion Microscopy without any Damage Characterized by TEM-EELS

S. Ogawa¹、T. Iijima¹、R. Sugie²、N. Kawasaki²、Y. Otsuka² (1.Advanced Industrial Science and Technology (AIST)、2.Toray Research Center, Inc. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-2-7] Stress Field and Defect Evaluation with Shallow Trench Isolation Structure after Transistor Fabrication Processing by Raman and Cathodoluminescence Spectroscopies

M. Kodera¹、N. Tsuchiya¹、S. Kakinuma²、N. Naka² (1.Toshiba Corp.、2.Horiba, Ltd. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-2-8] Effects of Sputtering Gas on Formation of Ultrathin PtHfSi Film

Y. Yoshimura¹、S. Ohmi¹ (1.Tokyo Inst. of Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-2-9] On-Chip Folded Dipole Antennas for Inter-Chip UWB Signal Transmission

K. Hashimoto¹、T. Sugitani¹、S. Kubota¹、T. Kikkawa¹ (1.Univ. of Hiroshima (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

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