GaN HEMTs

H.S. Kang¹、C.H. Won¹、D.S. Kim¹、S.M. Jeon¹、Y.J. Kim¹、Y.M. Kwon¹、S. Vodapally¹、J.H. Kim¹、J.H. Lee¹、Y.S. Lee¹ (1.Kyungpook National Univ.、2.Samsung Electronics Corp. Ltd. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-4-4] Improved Current Collapse Phenomenon in AlGaN/GaN-on-Si HFETs Using Sacrificial GaO_x Process

J.G. Lee¹、S.W. Han¹、B.R. Park¹、K.S Seo²、H. Kim¹、H.Y Cha¹ (1.Hongik Univ.、2.Seoul National Univ. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-5-1] Performance Characteristics and Applications for Second Generation SiC Power MOSFETs

J.W. Palmour¹、B. Hull¹、D. Gajewski¹、L. Cheng¹、J. Liu¹、S.T. Allen¹ (1.Cree, Inc. (USA))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-5-2] Electrical Characteristics of 21-kV SiC BJTs with Space-Modulated Junction Termination Extension

T. Okuda¹、H. Miyake¹、T. Kimoto¹、J. Suda¹ (1.Kyoto Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-5-3] OCVD Characteristics of 4H-SiC PiN Diode with Carbon Implantation

A. Tanaka¹、K. Nakayama¹、K. Asano¹、T. Miyazawa²、H. Tsuchida² (1.Kansai Electric Power Co., Inc.、2.Central Res. Inst. of Electric Power Industry (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-5-4] Neutron Induced Single-Event Burnout in SiC Power Diode

T. Shoji^1,3、S. Nishida²、K. Hamada²、H. Tadano³ (1.Toyota Central R&D Labs., Inc.、2.Toyota Motor Corp.、3.Univ. of Tsukuba (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-5-5L] Evaluation of Fully Implanted Lightly Doped Drain (LDD) GaN-MISFET for Low Voltage and High Frequency Application

I. Kume¹、A. Tanabe¹、H. Takeda¹、S. Saito¹、N. Furutake¹、T. Hase¹ (1.Renesas Electronics Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-1] Recent developments in GaN HEMTs and MMICs for high power electronics

P. Waltereit¹、W. Bronner¹、P. Brückner¹、M. Dammann¹、R. Reiner¹、S. Müller¹、J. Kühn¹、M. Mußer¹、R. Quay¹、M. Mikulla¹、O. Ambacher¹ (1.Fraunhofer Inst. for Applied Solid State Physics (Germany))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-2] Electroluminescence under the gate region using AlGaN/GaN HEMT with a transparent gate electrode

T. Narita¹、Y. Fujimoto¹、A. Wakejima¹、T. Egawa¹ (1.Nagoya Inst. of Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-3] Analysis on trade-off between drain resistance and drain-source capacitance of source field plate GaN HEMT

Y. Yamaguchi¹、K. Hayashi¹、T. Oishi¹、H. Otsuka¹、K. Yamanaka¹、Y. Miyamoto² (1.Mitsubishi Electric Corp.、2.Tokyo Tech (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

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