[PS-3-18] Negative differential conductivity in Gate-All-Around Si Nanowire FETs and its impact on Circuit Performance

K. Nayak¹、M. Bajaj²、A. Konar²、P.J. Oldiges³、H. Iwai⁴、K.V.R.M. Murali²、V.R. Rao¹ (1.IIT Bombay、2.IBM Semiconductor Research and Development Center, India、3.IBM Semiconductor Research and Development Center, USA、4.Tokyo Inst. of Tech. (India))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-19] Ge N-channel Omega-Gate Field Effect Transistors with [010] Channel Direction

C.W. Chen¹、C.T. Chung¹、J.Y. Tzeng¹、G.L. Luo²、C.H. Chien^1,2 (1.National Chiao-Tung Univ.、2.National Nano Device Labs. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-20] Suppression of short channel effects in accumulation-type UTB-InGaAs-OI nMISFETs with raised S/D fabricated by gate-last process

M. Oda¹、T. Irisawa¹、E. Mieda¹、Y. Kurashima²、H. Takagi²、W. Jevasuwan¹、T. Maeda¹、O. Ichikawa³、T. Ishihara³、T. Osada³、Y. Miyamoto⁴、T. Tezuka¹ (1.GNC, AIST、2.AIST、3.Sumitomo Chemical Co. Ltd.、4.Tokyo Inst. of Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-21] Anisotropic Phonon-Confinement-Effects/Band-Structure-Modulation of Two-Dimensional Si Layers Fabricated on Silicon-on-Quartz Substrates

T. Mizuno¹、Y. Nagata¹、Y. Suzuki¹、Y. Nakahara¹、T. Tanaka¹、T. Aoki¹、T. Sameshima² (1.Kanagawa Univ.、2.Tokyo Univ. of Agri. and Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-22] Improvement of Color Separation Characteristics of a Side-Illuminated Color Photo Sensor

T. Ariyoshi¹、K. Sakamoto¹、Y. Arima¹ (1.Kyushu Inst. of Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-23] Current-Mode Ambient Light Sensor for Ultra Low Power Applications

T.Y. Tsai¹、Y.C. King¹、C.J. Lin¹ (1.National Tsing-Hua Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-24L] Low-Cost and Scalable Embedded Non-Volatile Memory Using Quasi-Planar Bulk (Bulk+) Transistor with Standard CMOS Gate Stacks

K. Ota¹、M. Saitoh¹、C. Tanaka¹、D. Matsushita¹、T. Numata¹ (1.Toshiba Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-1] Ultra-high LRS Nonlinearity and high speed in HfOX Based Complementary Resistive Switch with Ti electrode for Vertical RRAM

Y.S. Chen¹、P.S. Chen²、H.Y. Lee¹、K.H. Tsai¹、T.Y. Wu¹、F. Chen¹、M.J. Tsai¹ (1.Indus. Tech. Res. Inst.、2.MingHsin Univ. of Sci. and Tech. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-2] A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidization of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer

M.S. Hadi¹、S. Kano¹、C. Dou¹、K. Kakushima¹、P. Ahmet¹、Y. Kataoka¹、A. Nishiyama¹、K. Natori¹、H. Wakabayashi¹、K. Tsutsui¹、H. Iwai¹、N. Sugii¹ (1.Tokyo Inst. of Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-3] Low-Power High-Performance Flexible Sm2O3 ReRAM for SoC Applications

S. Mondal¹、C.H. Chueh¹、T.M. Pan¹ (1.Chang Gung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

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